Masatsugu Kojima

According to our database, Masatsugu Kojima authored at least 10 papers between 2006 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2021

30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology.

Tsutomu Higuchi, Takuyo Kodama, Koji Kato, Ryo Fukuda, Naoya Tokiwa, Mitsuhiro Abe, Teruo Takagiwa, Yuki Shimizu, Junji Musha, Katsuaki Sakurai, Jumpei Sato, Tetsuaki Utsumi, Kazuhide Yoneya, Yasuhiro Suematsu, Toshifumi Hashimoto, Takeshi Hioka, Kosuke Yanagidaira, Masatsugu Kojima, Junya Matsuno, Kei Shiraishi, Kensuke Yamamoto, Shintaro Hayashi, Tomoharu Hashiguchi, Kazuko Inuzuka, Akio Sugahara, Mitsuaki Honma, Keiji Tsunoda, Kazumasa Yamamoto, Takahiro Sugimoto, Tomofumi Fujimura, Mizuki Kaneko, Hiroki Date, Osamu Kobayashi, Takatoshi Minamoto, Ryoichi Tachibana, Itaru Yamaguchi, Juan Lee, Venky Ramachandra, Srinivas Rajendra, Tianyu Tang, Siddhesh Darne, Jiwang Lee, Jason Li, Toru Miwa, Ryuji Yamashita, Hiroshi Sugawara, Naoki Ookuma, Masahiro Kano, Hiroyuki Mizukoshi, Yuki Kuniyoshi, Mitsuyuki Watanabe, Kei Akiyama, Hirotoshi Mori, Akira Arimizu, Yoshito Katano, Masakazu Ehama, Hiroshi Maejima, Koji Hosono, Masahiro Yoshihara

Proceedings of the IEEE International Solid-State Circuits Conference, 2021

2020

A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology.

Noboru Shibata, Takahisa Kawabe, Taira Shibuya, Mario Sako, Kosuke Yanagidaira, Toshifumi Hashimoto, Hiroki Date, Manabu Sato, Tomoki Nakagawa, Junji Musha, Takatoshi Minamoto, Kazushige Kanda, Mizuki Uda, Dai Nakamura, Katsuaki Sakurai, Takahiro Yamashita, Jieyun Zhou, Ryoichi Tachibana, Teruo Takagiwa, Takahiro Sugimoto, Masatsugu Ogawa, Yusuke Ochi, Takahiro Shimizu, Kazuaki Kawaguchi, Masatsugu Kojima, Takeshi Ogawa, Tomoharu Hashiguchi, Ryo Fukuda, Masami Masuda, Koichi Kawakami, Tadashi Someya, Yasuyuki Kajitani, Yuuki Matsumoto, Jun Nakai, Jumpei Sato, Namasivayam Raghunathan, Yee Lih Koh, Shuo Chen, Juan Lee, Hiroaki Nasu, Hiroshi Sugawara, Koji Hosono, Toshiki Hisada, Hiroshi Nakamura, Osamu Nagao, Naoki Kobayashi, Makoto Miakashi, Yasushi Nagadomi, Tomoaki Nakano

IEEE J. Solid State Circuits, 2020

2019

A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology.

Noboru Shibata, Kazushige Kanda, Takahiro Shimizu, Jun Nakai, Osamu Nagao, Naoki Kobayashi, Makoto Miakashi, Yasushi Nagadomi, Takeshi Nakano, Takahisa Kawabe, Taira Shibuya, Mario Sako, Kosuke Yanagidaira, Toshifumi Hashimoto, Hiroki Date, Manabu Sato, Tomoki Nakagawa, H. Takamoto, Junji Musha, Takatoshi Minamoto, Mizuki Uda, Dai Nakamura, Katsuaki Sakurai, Takahiro Yamashita, Jieyun Zhou, Ryoichi Tachibana, Teruo Takagiwa, Takahiro Sugimoto, Mikio Ogawa, Yusuke Ochi, Kazuaki Kawaguchi, Masatsugu Kojima, Takeshi Ogawa, Tomoharu Hashiguchi, Ryo Fukuda, Masami Masuda, Koichi Kawakami, Tadashi Someya, Yasuyuki Kajitani, Yuuki Matsumoto, Naohito Morozumi, Jumpei Sato, Namas Raghunathan, Yee Lih Koh, Shuo Chen, Juan Lee, Hiroaki Nasu, Hiroshi Sugawara, Koji Hosono, Toshiki Hisada, T. Kaneko, Hiroshi Nakamura

Proceedings of the IEEE International Solid- State Circuits Conference, 2019

2018

A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology.

Hiroshi Maejima, Kazushige Kanda, Susumu Fujimura, Teruo Takagiwa, Susumu Ozawa, Jumpei Sato, Yoshihiko Shindo, Manabu Sato, Naoaki Kanagawa, Junji Musha, Satoshi Inoue, Katsuaki Sakurai, Naohito Morozumi, Ryo Fukuda, Yuui Shimizu, Toshifumi Hashimoto, Xu Li, Yuki Shimizu, Kenichi Abe, Tadashi Yasufuku, Takatoshi Minamoto, Hiroshi Yoshihara, Takahiro Yamashita, Kazuhiko Satou, Takahiro Sugimoto, Fumihiro Kono, Mitsuhiro Abe, Tomoharu Hashiguchi, Masatsugu Kojima, Yasuhiro Suematsu, Takahiro Shimizu, Akihiro Imamoto, Naoki Kobayashi, Makoto Miakashi, Kouichirou Yamaguchi, Sanad Bushnaq, Hicham Haibi, Masatsugu Ogawa, Yusuke Ochi, Kenro Kubota, Taichi Wakui, Dong He, Weihan Wang, Hiroe Minagawa, Tomoko Nishiuchi, Hao Nguyen, Kwang-Ho Kim, Ken Cheah, Yee Lih Koh, Feng Lu, Venky Ramachandra, Srinivas Rajendra, Steve Choi, Keyur Payak, Namas Raghunathan, Spiros Georgakis, Hiroshi Sugawara, Seungpil Lee, Takuya Futatsuyama, Koji Hosono, Noboru Shibata, Toshiki Hisada, Tetsuya Kaneko, Hiroshi Nakamura

Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018

2013

A 19 nm 112.8 mm² 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface.

Kazushige Kanda, Noboru Shibata, Toshiki Hisada, Katsuaki Isobe, Manabu Sato, Yui Shimizu, Takahiro Shimizu, Takahiro Sugimoto, Tomohiro Kobayashi, Naoaki Kanagawa, Yasuyuki Kajitani, Takeshi Ogawa, Kiyoaki Iwasa, Masatsugu Kojima, Toshihiro Suzuki, Yuya Suzuki, Shintaro Sakai, Tomofumi Fujimura, Yuko Utsunomiya, Toshifumi Hashimoto, Naoki Kobayashi, Yuuki Matsumoto, Satoshi Inoue, Yoshinao Suzuki, Yasuhiko Honda, Yosuke Kato, Shingo Zaitsu, Hardwell Chibvongodze, Mitsuyuki Watanabe, Hong Ding, Naoki Ookuma, Ryuji Yamashita

IEEE J. Solid State Circuits, 2013

2012

A 19nm 112.8mm² 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface.

Noboru Shibata, Kazushige Kanda, Toshiki Hisada, Katsuaki Isobe, Manabu Sato, Yui Shimizu, Takahiro Shimizu, Takahiro Sugimoto, Tomohiro Kobayashi, Kazuko Inuzuka, Naoaki Kanagawa, Yasuyuki Kajitani, Takeshi Ogawa, J. Nakai, Kiyoaki Iwasa, Masatsugu Kojima, Toshihiro Suzuki, Yuya Suzuki, Shintaro Sakai, Tomofumi Fujimura, Yuko Utsunomiya, Toshifumi Hashimoto, Makoto Miakashi, Naoki Kobayashi, M. Inagaki, Yuuki Matsumoto, Satoshi Inoue, Yoshinao Suzuki, D. He, Yasuhiko Honda, Junji Musha, Masaki Nakagawa, Mitsuaki Honma, Naofumi Abiko, Mitsumasa Koyanagi, Masahiro Yoshihara, Kazumi Ino, Mitsuhiro Noguchi, Teruhiko Kamei, Yosuke Kato, Shingo Zaitsu, Hiroaki Nasu, Takuya Ariki, Hardwell Chibvongodze, Mitsuyuki Watanabe, Hong Ding, Naoki Ookuma, Ryuji Yamashita, G. Liang, Gertjan Hemink, Farookh Moogat, Cuong Trinh, Masaaki Higashitani, Tuan Pham, Kousuke Kanazawa

Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012

2008

A 120mm² 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology.

Kazushige Kanda, Masaru Koyanagi, Toshio Yamamura, Koji Hosono, Masahiro Yoshihara, Toru Miwa, Yosuke Kato, Alex Mak, Siu Lung Chan, Frank Tsai, Raul Cernea, Binh Le, Eiichi Makino, Takashi Taira, Hiroyuki Otake, Norifumi Kajimura, Susumu Fujimura, Yoshiaki Takeuchi, Mikihiko Itoh, Masanobu Shirakawa, Dai Nakamura, Yuya Suzuki, Yuki Okukawa, Masatsugu Kojima, Kazuhide Yoneya, Takamichi Arizono, Toshiki Hisada, Shinji Miyamoto, Mitsuhiro Noguchi, Toshitake Yaegashi, Masaaki Higashitani, Fumitoshi Ito, Teruhiko Kamei, Gertjan Hemink, Tooru Maruyama, Kazumi Ino, Shigeo Ohshima

Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008

2007

A 56-nm CMOS 99-mm² 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput.

Ken Takeuchi, Yasushi Kameda, Susumu Fujimura, Hiroyuki Otake, Koji Hosono, Hitoshi Shiga, Yoshihisa Watanabe, Takuya Futatsuyama, Yoshihiko Shindo, Masatsugu Kojima, Makoto Iwai, Masanobu Shirakawa, Masayuki Ichige, Kazuo Hatakeyama, Shinichi Tanaka, Teruhiko Kamei, Jia-Yi Fu, Adi Cernea, Yan Li, Masaaki Higashitani, Gertjan Hemink, Shinji Sato, Ken Oowada, Shih-Chung Lee, Naoki Hayashida, Jun Wan, Jeffrey Lutze, Shouchang Tsao, Mehrdad Mofidi, Kiyofumi Sakurai, Naoya Tokiwa, Hiroko Waki, Yasumitsu Nozawa, Kazuhisa Kanazawa, Shigeo Ohshima

IEEE J. Solid State Circuits, 2007

2006

A 146-mm² 8-gb multi-level NAND flash memory with 70-nm CMOS technology.

Takahiko Hara, Koichi Fukuda, Kazuhisa Kanazawa, Noboru Shibata, Koji Hosono, Hiroshi Maejima, Michio Nakagawa, Takumi Abe, Masatsugu Kojima, Masaki Fujiu, Yoshiaki Takeuchi, Kazumi Amemiya, Midori Morooka, Teruhiko Kamei, Hiroaki Nasu, Chi-Ming Wang, Kiyofumi Sakurai, Naoya Tokiwa, Hiroko Waki, Tohru Maruyama, Susumu Yoshikawa, Masaaki Higashitani, Tuan D. Pham, Yupin Fong, Toshiharu Watanabe

IEEE J. Solid State Circuits, 2006

A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput.

Ken Takeuchi, Yasushi Kameda, Susumu Fujimura, Hiroyuki Otake, Koji Hosono, Hitoshi Shiga, Yoshihisa Watanabe, Takuya Futatsuyama, Yoshihiko Shindo, Masatsugu Kojima, Makoto Iwai, Masanobu Shirakawa, Masayuki Ichige, Kazuo Hatakeyama, Shinichi Tanaka, Teruhiko Kamei, Jia-Yi Fu, Adi Cernea, Yan Li, Masaaki Higashitani, Gertjan Hemink, Shinji Sato, Ken Oowada, Shih-Chung Lee, Naoki Hayashida, Jun Wan, Jeffrey Lutze, Shouchang Tsao, Mehrdad Mofidi, Kiyofumi Sakurai, Naoya Tokiwa, Hiroko Waki, Yasumitsu Nozawa, Kazuhisa Kanazawa, Shigeo Ohshima

Proceedings of the 2006 IEEE International Solid State Circuits Conference, 2006