Masahiro Kamoshida

According to our database, Masahiro Kamoshida authored at least 4 papers between 2001 and 2016.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2016

A Low Power 64 Gb MLC NAND-Flash Memory in 15 nm CMOS Technology.

Mario Sako, Yoshihisa Watanabe, Takao Nakajima, Jumpei Sato, Kazuyoshi Muraoka, Masaki Fujiu, Fumihiro Kono, Michio Nakagawa, Masami Masuda, Koji Kato, Yuri Terada, Yuki Shimizu, Mitsuaki Honma, Akihiro Imamoto, Tomoko Araya, Hayato Konno, Takuya Okanaga, Tomofumi Fujimura, Xiaoqing Wang, Mai Muramoto, Masahiro Kamoshida, Masatoshi Kohno, Yoshinao Suzuki, Tomoharu Hashiguchi, Tsukasa Kobayashi, Masashi Yamaoka, Ryuji Yamashita

IEEE J. Solid State Circuits, 2016

2015

7.1 A low-power 64Gb MLC NAND-flash memory in 15nm CMOS technology.

Mario Sako, Yoshihisa Watanabe, Takao Nakajima, Jumpei Sato, Kazuyoshi Muraoka, Masaki Fujiu, Fumihiro Kouno, Michio Nakagawa, Masami Masuda, Koji Kato, Yuri Terada, Yuki Shimizu, Mitsuaki Honma, Akihiro Imamoto, Tomoko Araya, Hayato Konno, Takuya Okanaga, Tomofumi Fujimura, Xiaoqing Wang, Mai Muramoto, Masahiro Kamoshida, Masatoshi Kohno, Yoshinao Suzuki, Tomoharu Hashiguchi, Tsukasa Kobayashi, Masashi Yamaoka, Ryuji Yamashita

Proceedings of the 2015 IEEE International Solid-State Circuits Conference, 2015

2003

A 32-Mb chain FeRAM with segment/stitch array architecture.

Shinichiro Shiratake, Tadashi Miyakawa, Yoshiaki Takeuchi, Ryu Ogiwara, Masahiro Kamoshida, Katsuhiko Hoya, Kohei Oikawa, Tohru Ozaki, Iwao Kunishima, Koji Yamakawa, Shigeki Sugimoto, Daisaburo Takashima, Hans-Oliver Joachim, Norbert Rehm, Joerg Wohlfahrt, Nicolas Nagel, Gerhard Beitel, Michael Jacob, Thomas Roehr

IEEE J. Solid State Circuits, 2003

2001

A 76-mm² 8-Mb chain ferroelectric memory.

Daisaburo Takashima, Yoshiaki Takeuchi, Tadashi Miyakawa, Yasuo Itoh, Ryu Ogiwara, Masahiro Kamoshida, Katsuhiko Hoya, Sumiko Mano Doumae, Tohru Ozaki, Hiroyuki Kanaya, Koji Yamakawa, Iwao Kunishima, Yukihito Oowaki

IEEE J. Solid State Circuits, 2001