Martina Baeumler

According to our database, Martina Baeumler authored at least 6 papers between 2014 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2021

Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress.

Maximilian Dammann, Martina Baeumler, Tobias Kemmer, Helmer Konstanzer, Peter Brückner, Sebastian Krause, Andreas Graff, Michél Simon-Najasek

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress.

Tobias Kemmer, Michael Dammann, Martina Baeumler, Vladimir Polyakov, Peter Brückner, Helmer Konstanzer, Rüdiger Quay, Oliver Ambacher

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018

Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology.

Maximilian Dammann, Martina Baeumler, Peter Brückner, Tobias Kemmer, Helmer Konstanzer, Andreas Graff, Michél Simon-Najasek, Rüdiger Quay

Microelectron. Reliab., 2018

2017

Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications.

Maximilian Dammann, Martina Baeumler, Vladimir Polyakov, Peter Brückner, Helmer Konstanzer, Rüdiger Quay, Michael Mikulla, Andreas Graff, Michél Simon-Najasek

Microelectron. Reliab., 2017

2015

Degradation of 0.25 μm GaN HEMTs under high temperature stress test.

Maximilian Dammann, Martina Baeumler, Peter Brückner, Wolfgang Bronner, Stephan Maroldt, Helmer Konstanzer, Matthias Wespel, Rüdiger Quay, Michael Mikulla, Andreas Graff, M. Lorenzini, M. Fagerlind, P. J. van der Wel, T. Rödle

Microelectron. Reliab., 2015

2014

Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices.

Matthias Wespel, Martina Baeumler, Vladimir Polyakov, Maximilian Dammann, Richard Reiner, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher

Microelectron. Reliab., 2014