Martin Trentzsch

According to our database, Martin Trentzsch authored at least 4 papers between 2014 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2021

Novel embedded single poly floating gate flash demonstrated in 22nm FDSOI technology.

Thomas Melde, Martin Trentzsch, Stefan Dünkel, Ralf Richter, Michael Otto, H. Giesler, Francois Weisbuch, N. Weddeler, Sven Beyer

Proceedings of the IEEE International Memory Workshop, 2021

2019

Performance Improvement on HfO2-Based 1T Ferroelectric NVM by Electrical Preconditioning.

Carlo Cagli, Luca Perniola, Fred Gaillard, Stefan Dünkel, Thomas Melde, B. Mueller, Martin Trentzsch, Sven Wittek, Sven Beyer

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-Memory.

Evelyn T. Breyer, Halid Mulaosmanovic, Jens Trommer, Thomas Melde, Stefan Dünkel, Martin Trentzsch, Sven Beyer, Thomas Mikolajick, Stefan Slesazeck

Proceedings of the 49th European Solid-State Device Research Conference, 2019

2014

A quantitative study of Phosphorous implantation damage on the thick gate oxide of the 28 nm node.

Xinggong Wan, Sandhya Chandrashekhar, Boris Bayha, Martin Trentzsch, Torben Balzer, Mahesh Siddabathula, Oliver Aubel

Microelectron. Reliab., 2014