Martin Schrems

According to our database, Martin Schrems authored at least 7 papers between 2006 and 2016.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2016

CMOS integrated tungsten oxide nanowire networks for ppb-level hydrogen sulfide sensing.

Johanna Krainer, Marco Deluca, Eva Lackner, Florentyna Sosada, Robert Wimmer-Teubenbacher, Anton Köck, Christian Gspan, Justyna Bekacz, Anneliese Poenninger, Karl Rohracher, Ewald Wachmann, Martin Schrems

Proceedings of the 2016 IEEE SENSORS, Orlando, FL, USA, October 30 - November 3, 2016, 2016

2014

Manufacturing of 3D integrated sensors and circuits.

Martin Schrems, Joerg Siegert, Peter Dorfi, Jochen Kraft, Ewald Stueckler, Franz Schrank, Siegfried Selberherr

Proceedings of the 44th European Solid State Device Research Conference, 2014

Bimetallic nanoparticles for optimizing CMOS integrated SnO2 gas sensor devices.

Giorgio C. Mutinati, Elise Brunet, Olena Yurchenko, Elmar Laubender, Gerald A. Urban, Anton Köck, Stephan Steinhauer, Joerg Siegert, Karl Rohracher, Franz Schrank, Martin Schrems

Proceedings of the 44th European Solid State Device Research Conference, 2014

2008

Hot-carrier reliability in high-voltage lateral double-diffused MOS transistors.

Verena Vescoli, Jong Mun Park, Hubert Enichlmair, Martin Knaipp, Georg Röhrer, Rainer Minixhofer, Martin Schrems

IET Circuits Devices Syst., 2008

Scalable High Voltage CMOS technology for Smart Power and sensor applications.

Martin Schrems, Martin Knaipp, Hubert Enichlmair, Verena Vescoli, Rainer Minixhofer, Ehrenfried Seebacher, Friedrich Peter Leisenberger, Ewald Wachmann, Gregor Schatzberger, Heimo Gensinger

Elektrotech. Informationstechnik, 2008

2006

A Non-Volatile Embedded Memory for High Temperature Automotive and High-Retention Applications.

M. Thomas, J. Pathak, J. Payne, Friedrich Peter Leisenberger, Ewald Wachmann, Gregor Schatzberger, Andreas Wiesner, Martin Schrems

Proceedings of the 7th International Symposium on Quality of Electronic Design (ISQED 2006), 2006

FlexRay transceiver in a 0.35 µm CMOS high-voltage technology.

Federico Baronti, Paolo D'Abramo, Martin Knaipp, Rainer Minixhofer, Roberto Roncella, Roberto Saletti, Martin Schrems, Riccardo Serventi, Verena Vescoli

Proceedings of the Conference on Design, Automation and Test in Europe: Designers' Forum, 2006