Martin Pfost

According to our database, Martin Pfost authored at least 7 papers between 1996 and 2018.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2018

Single pulse short-circuit robustness and repetitive stress aging of GaN GITs.

Alberto Castellazzi, Asad Fayyaz, Siwei Zhu, Thorsten Oeder, Martin Pfost

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Aging sensors for on-chip metallization of integrated LDMOS transistors under cyclic thermo-mechanical stress.

Matthias Ritter, Martin Pfost

Microelectron. Reliab., 2017

Electrical and thermal failure modes of 600 V p-gate GaN HEMTs.

Thorsten Oeder, Alberto Castellazzi, Martin Pfost

Microelectron. Reliab., 2017

2013

An experimental study of integrated DMOS transistors with increased energy capability.

Timo Zawischka, Martin Pfost, Michael Ebli, Dragos Costachescu

Proceedings of the European Solid-State Device Research Conference, 2013

2004

An experimental study on substrate coupling in bipolar/BiCMOS technologies.

Martin Pfost, Pietro Brenner, Thomas Huttner, Andriy Romanyuk

IEEE J. Solid State Circuits, 2004

1998

Modeling and measurement of substrate coupling in Si-bipolar IC's up to 40 GHz.

Martin Pfost, Hans-Martin Rein

IEEE J. Solid State Circuits, 1998

1996

Modeling substrate effects in the design of high-speed Si-bipolar ICs.

Martin Pfost, Hans-Martin Rein, Thomas Holzwarth

IEEE J. Solid State Circuits, 1996