Martin Lemberger

According to our database, Martin Lemberger authored at least 6 papers between 2001 and 2007.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2007

Polarity asymmetry of stress and charge trapping behavior of thin Hf- and Zr-silicate layers.

Albena Paskaleva, Martin Lemberger, Anton J. Bauer

Microelectron. Reliab., 2007

Chemical vapor deposition of tantalum nitride films for metal gate application using TBTDET and novel single-source MOCVD precursors.

Martin Lemberger, A. Baunemann, Anton J. Bauer

Microelectron. Reliab., 2007

2005

Conduction mechanisms and an evidence for phonon-assisted conduction process in thin high-k Hf_xTi_ySi_zO films.

Albena Paskaleva, Anton J. Bauer, Martin Lemberger

Microelectron. Reliab., 2005

Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor.

Martin Lemberger, Albena Paskaleva, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel

Microelectron. Reliab., 2005

2003

Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors.

Albena Paskaleva, Martin Lemberger, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel

Microelectron. Reliab., 2003

2001

Electrical reliability aspects of through the gate implanted MOS structures with thin oxides.

Michael P. M. Jank, Martin Lemberger, Anton J. Bauer, Lothar Frey, Heiner Ryssel

Microelectron. Reliab., 2001