Martin Knaipp

According to our database, Martin Knaipp authored at least 4 papers between 2006 and 2008.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2008

Hot-carrier reliability in high-voltage lateral double-diffused MOS transistors.

Verena Vescoli, Jong Mun Park, Hubert Enichlmair, Martin Knaipp, Georg Röhrer, Rainer Minixhofer, Martin Schrems

IET Circuits Devices Syst., 2008

Scalable High Voltage CMOS technology for Smart Power and sensor applications.

Martin Schrems, Martin Knaipp, Hubert Enichlmair, Verena Vescoli, Rainer Minixhofer, Ehrenfried Seebacher, Friedrich Peter Leisenberger, Ewald Wachmann, Gregor Schatzberger, Heimo Gensinger

Elektrotech. Informationstechnik, 2008

2006

Evolution of a CMOS Based Lateral High Voltage Technology Concept.

Martin Knaipp, Jong Mun Park, Verena Vescoli

Microelectron. J., 2006

FlexRay transceiver in a 0.35 µm CMOS high-voltage technology.

Federico Baronti, Paolo D'Abramo, Martin Knaipp, Rainer Minixhofer, Roberto Roncella, Roberto Saletti, Martin Schrems, Riccardo Serventi, Verena Vescoli

Proceedings of the Conference on Design, Automation and Test in Europe: Designers' Forum, 2006