Martin Domeij

According to our database, Martin Domeij authored at least 3 papers between 2003 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study.

Peter Moens, F. Geenen, L. De Schepper, JF Cano, J. Lettens, S. Maslougkas, J. Franchi, Martin Domeij

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2021

Is there a perfect SiC MosFETs Device on an imperfect crystal?

Thomas Neyer, Martin Domeij, Hrishikesh Das, Swapna Sunkari

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2003

Dynamic avalanche and reliability of high voltage diodes.

Josef Lutz, Martin Domeij

Microelectron. Reliab., 2003