Marko Radosavljevic

According to our database, Marko Radosavljevic authored at least 6 papers between 2019 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of three.

2024

PBTI in Scaled Oxide Submicron Enhancement Mode High-K Gallium Nitride Transistors.

Soumitra Joy, Kaustubh Joshi, Ahmad Zubair, Samuel Bader, Jason Peck, Michael Beumer, Pratik Koirala, Marko Radosavljevic, Heli Vora, Inanc Meric, Han Wui Then

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Design kit development on a 300mm GaN-on-Si demonstration platform with integrated Si pMOS.

Samuel James Bader, Ahmad Zubair, Alvaro Latorre-Rey, Mikkel Hansen, Soumen Sarkar, Abdul Asif, Dimitri Frolov, Kaushik Narayanan, Jag Rangaswamy, Puneet Kanwar Kaur, Sanjeev Kumar, Nirmal Kundu, Shreyas Samraksh Jayaprakash, Abhijeet Khobragade, Yashwanth Pathivada, Qiang Yu, Jagannathan Vasudevan, Ibukun Momson, Said Rami, Heli Vora, Marko Radosavljevic, Pratik Koirala, Michael Beumer, Andrey Vyatskikh, Paul Nordeen, Thomas Hoff, Nachiket V. Desai, Han Wui Then

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2024

2022

5G mmWave Power Amplifier and Low-Noise Amplifier in 300mm GaN-on-Si Technology.

Qiang Yu, Han Wui Then, Derek Thomson, Jessica C. Chou, Jeffrey Garrett, Iwen Huang, Ibukunoluwa Momson, Surej Ravikumar, Seahee Hwangbo, Alvaro Latorre-Rey, Ananda Roy, Marko Radosavljevic, Michael Beumer, Pratik Koirala, Nicole Thomas, Nityan Nair, Heli Vora, Samuel Bader, Johann Rode, Jonathan Jensen, Said Rami

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

A Fully Integrated 3.2-4.7GHz Doherty Power Amplifier in 300mm GaN-on-Si Technology.

Qiang Yu, Derek Thomson, Han Wui Then, Alvaro Latorre-Rey, Marko Radosavljevic, Michael Beumer, Pratik Koirala, Nicole Thomas, Nityan Nair, Heli Vora, Samuel Bader, Said Rami

Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

2021

A 32A 5V-Input, 94.2% Peak Efficiency High-Frequency Power Converter Module Featuring Package-Integrated Low-Voltage GaN NMOS Power Transistors.

Nachiket V. Desai, Harish K. Krishnamurthy, William J. Lambert, Jingshu Yu, Han Wui Then, Nicolas Butzen, Sheldon Weng, Christopher Schaef, N. Nidhi, Marko Radosavljevic, Johann Rode, Justin Sandford, Kaladhar Radhakrishnan, Krishnan Ravichandran, Bernhard Sell, James W. Tschanz, Vivek De

Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021

2019

High-K Gate Dielectric GaN MOS-HEMTs with Regrown n+ InGaN Source/Drain (Invited Paper).

Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Sanaz Gardner, Seung-Hoon Sung, Paul Fischer

Proceedings of the Device Research Conference, 2019