Mark Hopkinson

According to our database, Mark Hopkinson authored at least 6 papers between 2006 and 2014.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2014

Investigations on photocurrent bi-stability of a two-color mode-locked quantum dot laser.

Stefan Breuer, Mattia Rossetti, Lukas Drzewietzki, Ivo Montrosset, Michel Krakowski, Mark Hopkinson, Wolfgang Elsäßer

Proceedings of the 16th International Conference on Transparent Optical Networks, 2014

2009

Electric field effects on the carrier migration in self-assembled InAs/GaAs quantum dots.

F. A. M. Marques, A. F. G. Monte, Mark Hopkinson

Microelectron. J., 2009

Maximising performance of optical coherence tomography systems using a multi-section chirped quantum dot superluminescent diode.

P. D. L. Judson, K. M. Groom, D. T. D. Childs, Mark Hopkinson, Nikola Krstajic, Richard A. Hogg

Microelectron. J., 2009

Empirical bond order potential calculations of the elastic properties of epitaxial InGaSbAs layers.

Vesel Haxha, Raman Garg, Max A. Migliorato, I. W. Drouzas, José María Ulloa, P. M. Koenraad, M. J. Steer, H. Y. Liu, Mark Hopkinson, D. J. Mowbray

Microelectron. J., 2009

2006

Photoluminescence beyond 1.5mum from InAs quantum dots.

Jo Shien Ng, H. Y. Liu, M. J. Steer, Mark Hopkinson, J. P. R. David

Microelectron. J., 2006

The control of size and areal density of InAs self-assembled quantum dots in selective area molecular beam epitaxy on GaAs (001) surface.

J. C. Lin, P. W. Fry, Richard A. Hogg, Mark Hopkinson, Ian Mark Ross, A. G. Cullis, R. S. Kolodka, A. I. Tartakovskii, M. S. Skolnick

Microelectron. J., 2006