Mario Santo Alessandrino

According to our database, Mario Santo Alessandrino authored at least 5 papers between 2021 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETs.

Patrick Fiorenza, Francesco Cordiano, Mario Santo Alessandrino, Alfio Russo, Edoardo Zanetti, Mario Saggio, C. Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Carrot-like crystalline defects on the 4H-SiC powerMOSFET yield and reliability.

Beatrice Carbone, Mario Santo Alessandrino, Alfio Russo, Elisa Vitanza, Filippo Giannazzo, Patrick Fiorenza, Fabrizio Roccaforte

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Failure Analysis of AlGaN/GaN Power HEMTs through an innovative sample preparation approach.

R. L. Torrisi, Salvatore Adamo, Mario Santo Alessandrino, Cettina Bottari, Beatrice Carbone, M. Palmisciano, Elisa Vitanza

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Failure analysis addressing method of optically undetected defectivity on 4H-SiC PowerMOSFET epitaxial layer.

Mario Santo Alessandrino, Beatrice Carbone, Francesco Cordiano, Bruna Mazza, Alfio Russo, W. Coco, Massimo Boscaglia, A. Di Salvo, A. Lombardo, D. Scarcella, Elisa Vitanza, Patrick Fiorenza

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Correlation between MOSFETs breakdown and 4H-SiC epitaxial defects.

Patrick Fiorenza, Salvatore Adamo, Mario Santo Alessandrino, Cettina Bottari, Beatrice Carbone, Clarice Di Martino, Alfio Russo, Mario Saggio, Carlo Venuto, Elisa Vitanza, Edoardo Zanetti, Filippo Giannazzo, Fabrizio Roccaforte

Proceedings of the IEEE International Reliability Physics Symposium, 2021