Mario Saggio

According to our database, Mario Saggio authored at least 5 papers between 2021 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Innovative Solutions to Make Driving Safer, Greener and More Connected.

Salvatore Cascino, Mario Saggio, Antonio Imbruglia, Filippo Scrimizzi, Mario Pulvirenti, Alessandro Tumminia, Gaetano Sicurella, Vincenzo Alessandro Magagnini, Mario Paparo

Proceedings of the 2024 IEEE International Symposium on Measurements & Networking (M&N), 2024

2023

Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETs.

Patrick Fiorenza, Francesco Cordiano, Mario Santo Alessandrino, Alfio Russo, Edoardo Zanetti, Mario Saggio, C. Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage instability in power MOSFETs.

Patrick Fiorenza, Corrado Bongiorno, Angelo Alberto Messina, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Identification of Interface States responsible for VTH Hysteresis in packaged SiC MOSFETs.

Marcello Cioni, Patrick Fiorenza, Fabrizio Roccaforte, Mario Saggio, Salvatore Cascino, Angelo Alberto Messina, Vincenzo Vinciguerra, Michele Calabretta, Alessandro Chini

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Correlation between MOSFETs breakdown and 4H-SiC epitaxial defects.

Patrick Fiorenza, Salvatore Adamo, Mario Santo Alessandrino, Cettina Bottari, Beatrice Carbone, Clarice Di Martino, Alfio Russo, Mario Saggio, Carlo Venuto, Elisa Vitanza, Edoardo Zanetti, Filippo Giannazzo, Fabrizio Roccaforte

Proceedings of the IEEE International Reliability Physics Symposium, 2021