Mario Lanza
Orcid: 0000-0003-4756-8632
According to our database1,
Mario Lanza
authored at least 17 papers
between 2007 and 2024.
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Bibliography
2024
2023
2022
Neuromorph. Comput. Eng., 2022
CoRR, 2022
Adv. Intell. Syst., 2022
2021
Proceedings of the IEEE International Reliability Physics Symposium, 2021
2020
Reversible dielectric breakdown in h-BN stacks: a statistical study of the switching voltages.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
2019
Proceedings of the IEEE International Reliability Physics Symposium, 2019
2018
Enhanced reliability of hexagonal boron nitride dielectric stacks due to high thermal conductivity.
Proceedings of the IEEE International Reliability Physics Symposium, 2018
2017
Equivalent circuit model for the electron transport in 2D resistive switching material systems.
Proceedings of the 47th European Solid-State Device Research Conference, 2017
2013
Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors.
Microelectron. Reliab., 2013
2012
Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO<sub>2</sub>/Pt structures.
Microelectron. Reliab., 2012
2010
UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements.
Microelectron. Reliab., 2010
2009
Trapped charge and stress induced leakage current (SILC) in tunnel SiO<sub>2</sub> layers of de-processed MOS non-volatile memory devices observed at the nanoscale.
Microelectron. Reliab., 2009
2007
Influence of the manufacturing process on the electrical properties of thin (k stacks observed with CAFM.
Microelectron. Reliab., 2007