Marina Preschle

According to our database, Marina Preschle authored at least 1 paper in 2018.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2018

A homogeneous and reproducible large-area, low dispersion GaN-on-Si normally-off 600 V transistor technology using selective GaN etching.

Patrick Waltereit, Marina Preschle, Stefan Muller, Lutz Kirste, Heiko Czap, Joachim Ruster, Michael Dammann, Richard Reiner

Proceedings of the 76th Device Research Conference, 2018