Marie-Antoinette di Forte-Poisson

According to our database, Marie-Antoinette di Forte-Poisson authored at least 4 papers between 2012 and 2015.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2015

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs.

Davide Bisi, Antonio Stocco, Isabella Rossetto, Matteo Meneghini, Fabiana Rampazzo, Alessandro Chini, Fabio Soci, Alessio Pantellini, Claudio Lanzieri, Piero Gamarra, Cedric Lacam, M. Tordjman, Marie-Antoinette di Forte-Poisson, Davide De Salvador, Marco Bazzan, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2015

2014

Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs.

Isabella Rossetto, Fabiana Rampazzo, Matteo Meneghini, Marco Silvestri, Christian Dua, Piero Gamarra, Raphael Aubry, Marie-Antoinette di Forte-Poisson, O. Patard, Sylvain L. Delage, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2014

Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences.

Isabella Rossetto, Fabiana Rampazzo, Simone Gerardin, Matteo Meneghini, Marta Bagatin, Alberto Zanandrea, Alessandro Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, Christian Dua, Marie-Antoinette di Forte-Poisson, Raphael Aubry, Mourad Oualli, Sylvain L. Delage

Proceedings of the 44th European Solid State Device Research Conference, 2014

2012

Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure.

Clemens Ostermaier, Peter Lagger, Mohammed Alomari, Patrick Herfurth, David Maier, Alexander Alexewicz, Marie-Antoinette di Forte-Poisson, Sylvain L. Delage, Gottfried Strasser, Dionyz Pogany, Erhard Kohn

Microelectron. Reliab., 2012