Marc Porti
Orcid: 0000-0001-7438-3823
According to our database1,
Marc Porti
authored at least 17 papers
between 2001 and 2021.
Collaborative distances:
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Bibliography
2021
Methodology for the Simulation of the Variability of MOSFETs With Polycrystalline High-k Dielectrics Using CAFM Input Data.
IEEE Access, 2021
2018
Analysis of Body Bias and RTN-Induced Frequency Shift of Low Voltage Ring Oscillators in FDSOI Technology.
Proceedings of the 28th International Symposium on Power and Timing Modeling, 2018
2015
Proceedings of the IEEE International Reliability Physics Symposium, 2015
Threshold voltage and on-current Variability related to interface traps spatial distribution.
Proceedings of the 45th European Solid State Device Research Conference, 2015
2013
Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors.
Microelectron. Reliab., 2013
2012
Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO<sub>2</sub>/Pt structures.
Microelectron. Reliab., 2012
2010
UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements.
Microelectron. Reliab., 2010
2009
Trapped charge and stress induced leakage current (SILC) in tunnel SiO<sub>2</sub> layers of de-processed MOS non-volatile memory devices observed at the nanoscale.
Microelectron. Reliab., 2009
2008
Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors.
Microelectron. Reliab., 2008
2007
Influence of the manufacturing process on the electrical properties of thin (k stacks observed with CAFM.
Microelectron. Reliab., 2007
2005
Pre- and post-BD electrical conduction of stressed HfO<sub>2</sub>/SiO<sub>2</sub> MOS gate stacks observed at the nanoscale.
Microelectron. Reliab., 2005
2004
Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS devices after current limited stresses.
Microelectron. Reliab., 2004
2003
Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM.
Microelectron. Reliab., 2003
Pre-breakdown noise in electrically stressed thin SiO<sub>2</sub> layers of MOS devices observed with C-AFM.
Microelectron. Reliab., 2003
2001
Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO<sub>2</sub> films.
Microelectron. Reliab., 2001
Local current fluctuations before and after breakdown of thin SiO<sub>2</sub> films observed with conductive atomic force microscope.
Microelectron. Reliab., 2001
Microelectron. Reliab., 2001