Marc M. Heyns

According to our database, Marc M. Heyns authored at least 11 papers between 1999 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Transition-state-theory-based interpretation of Landau double well potential for ferroelectrics.

Md Nur K. Alam, Sergiu Clima, Ben Kaczer, Philippe Roussel, Brecht Truijen, Lars-Åke Ragnarsson, N. Horiguchi, Marc M. Heyns, Jan Van Houdt

CoRR, 2024

2022

Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements.

Md Nur K. Alam, Yusuke Higashi, Brecht Truijen, Ben Kaczer, Mihaela Ioana Popovici, Bj O'Sullivan, Philippe Roussel, Robin Degraeve, Marc M. Heyns, Jan Van Houdt

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2019

Reconfigurable nanoscale spin wave majority gate with frequency-division multiplexing.

Giacomo Talmelli, Thibaut Devolder, Nick Träger, Johannes Förster, Sebastian Wintz, Markus Weigand, Hermann Stoll, Marc M. Heyns, Gisela Schütz, Iuliana P. Radu, Joachim Gräfe, Florin Ciubotaru, Christoph Adelmann

CoRR, 2019

2017

Material selection and device design guidelines for two-dimensional materials based TFETs.

Tarun Agarwal, Bart Soree, Iuliana P. Radu, Praveen Raghavan, Gianluca Fiori, Marc M. Heyns, Wim Dehaene

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016

Effect of material parameters on two-dimensional materials based TFETs: An energy-delay perspective.

Tarun Agarwal, Iuliana P. Radu, Praveen Raghavan, Gianluca Fiori, Aaron Thean, Marc M. Heyns, Wim Dehaene

Proceedings of the ESSCIRC Conference 2016: 42^nd European Solid-State Circuits Conference, 2016

2015

The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices.

Abhitosh Vais, Koen Martens, Jacopo Franco, Dennis Lin, AliReza Alian, Philippe Roussel, S. Sioncke, Nadine Collaert, Aaron Thean, Marc M. Heyns, Guido Groeseneken, Kristin De Meyer

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2012

Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications.

Jacopo Franco, Ben Kaczer, Jérôme Mitard, Maria Toledano-Luque, Felice Crupi, Geert Eneman, Ph. J. Rousse, Tibor Grasser, M. Cho, Thomas Kauerauf, Liesbeth Witters, Geert Hellings, L.-Å. Ragnarsson, Naoto Horiguchi, Marc M. Heyns, Guido Groeseneken

Proceedings of the IEEE International Conference on IC Design & Technology, 2012

2007

Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling.

M. Houssa, Marc Aoulaiche, Stefan De Gendt, Guido Groeseneken, Marc M. Heyns

Microelectron. Reliab., 2007

2005

Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance.

G. S. Lujan, Wim Magnus, L.-Å. Ragnarsson, Stefan Kubicek, Stefan De Gendt, Marc M. Heyns, Kristin De Meyer

Microelectron. Reliab., 2005

2001

In situ crystallisation in ZrO₂ thin films during high temperature X-ray diffraction.

Chao Zhao, Gert Roebben, Hugo Bender, Edward Young, S. Haukka, Michel Houssa, Mohamed Naili, Stefan De Gendt, Marc M. Heyns, Omer Van der Biest

Microelectron. Reliab., 2001

1999

Cost-effective cleaning and high-quality thin gate oxides.

Marc M. Heyns, Twan Bearda, Ingrid Cornelissen, Stefan De Gendt, Robin Degraeve, Guido Groeseneken, Conny Kenens, D. Martin Knotter, Lee M. Loewenstein, Paul W. Mertens, Sofie Mertens, Marc Meuris, Tanya Nigam, Marc Schaekers, Ivo Teerlinck, Wilfried Vandervorst, Rita Vos, Klaus Wolke

IBM J. Res. Dev., 1999