Manoj Saxena
Orcid: 0000-0002-9368-4194Affiliations:
- University of Delhi, India
According to our database1,
Manoj Saxena
authored at least 19 papers
between 2012 and 2024.
Collaborative distances:
Collaborative distances:
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Bibliography
2024
Microelectron. J., 2024
2023
Vis. Comput., October, 2023
2022
Investigation of proton irradiated dual field plate AlGaN/GaN HEMTs: TCAD based assessment.
Microelectron. J., 2022
IEEE Access, 2022
Proceedings of the VLSI Design and Test - 26th International Symposium, 2022
Investigation of Traps in AlGaN/GaN HEMT Epitaxial Structure Using Conductance Method.
Proceedings of the VLSI Design and Test - 26th International Symposium, 2022
2021
A comparative study on the accuracy of small-signal equivalent circuit modeling for large gate periphery GaN HEMT with different source to drain length and gate width.
Microelectron. J., 2021
Robust and Secure Digital Image Watermarking Technique Using Arnold Transform and Memristive Chaotic Oscillators.
IEEE Access, 2021
2018
Proceedings of the VLSI Design and Test - 22nd International Symposium, 2018
2017
Analysis of Electrolyte-Insulator-Semiconductor Tunnel Field-Effect Transistor as pH Sensor.
Proceedings of the VLSI Design and Test - 21st International Symposium, 2017
Improved Gate Modulation in Tunnel Field Effect Transistors with Non-rectangular Tapered Y-Gate Geometry.
Proceedings of the VLSI Design and Test - 21st International Symposium, 2017
Variability Investigation of Double Gate JunctionLess (DG-JL) Transistor for Circuit Design Perspective.
Proceedings of the VLSI Design and Test - 21st International Symposium, 2017
2014
Temperature dependent subthreshold model of long channel GAA MOSFET including localized charges to study variations in its temperature sensitivity.
Microelectron. Reliab., 2014
2013
Numerical analysis of localised charges impact on static and dynamic performance of nanoscale cylindrical surrounding gate MOSFET based CMOS inverter.
Microelectron. Reliab., 2013
Microelectron. J., 2013
2012
Immunity against temperature variability and bias point invariability in double gate tunnel field effect transistor.
Microelectron. Reliab., 2012
Simulation study of Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for high temperature applications.
Microelectron. Reliab., 2012
Temperature dependent drain current model for Gate Stack Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for wide operating temperature range.
Microelectron. Reliab., 2012
Effect of localised charges on nanoscale cylindrical surrounding gate MOSFET: Analog performance and linearity analysis.
Microelectron. Reliab., 2012