Malte Czernohorsky
According to our database1,
Malte Czernohorsky
authored at least 8 papers
between 2018 and 2022.
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On csauthors.net:
Bibliography
2022
Reliability of Ferroelectric and Antiferroelectric Si: HfO2 materials in 3D capacitors by TDDB studies.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability.
Proceedings of the IEEE International Memory Workshop, 2022
Enablement of CMOS integrated sensor, harvesting and storage applications by ferroelectric HfO2.
Proceedings of the International Conference on IC Design and Technology, 2022
2020
BEoL Reliability, XPS and REELS Study on low-k Dielectrics to understand Breakdown Mechanisms.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
2019
Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications.
Proceedings of the 19th Non-Volatile Memory Technology Symposium, 2019
2018
CMOS Compatible Pyroelectric Applications Enabled by Doped HfO2 Films on Deep-Trench Structures.
Proceedings of the 48th European Solid-State Device Research Conference, 2018