Makoto Morino

According to our database, Makoto Morino authored at least 4 papers between 1996 and 2005.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2005

1.8-V 800-Mb/s/pin DDR2 and 2.5-V 400-Mb/s/pin DDR1 compatibly designed 1Gb SDRAM with dual-clock input-latch scheme and hybrid multi-oxide output buffer.

Hiroki Fujisawa, Masayuki Nakamura, Yasuhiro Takai, Yasuji Koshikawa, Tatsuya Matano, Seiji Narui, Narikazu Usuki, Chiaki Dono, Shinichi Miyatake, Makoto Morino, Koji Arai, Shuichi Kubouchi, Isamu Fujii, Hideyuki Yoko, Takao Adachi

IEEE J. Solid State Circuits, 2005

2003

A 1-Gb/s/pin 512-Mb DDRII SDRAM using a digital DLL and a slew-rate-controlled output buffer.

Tatsuya Matano, Yasuhiro Takai, Tsugio Takahashi, Yuusuke Sakito, Isamu Fujii, Yoshihiro Takaishi, Hiroki Fujisawa, Shuichi Kubouchi, Seiji Narui, Koji Arai, Makoto Morino, Masayuki Nakamura, Shinichi Miyatake, Toshihiro Sekiguchi, Kuniaki Koyama

IEEE J. Solid State Circuits, 2003

2001

A multigigabit DRAM technology with 6F² open-bitline cell, distributed overdriven sensing, and stacked-flash fuse.

Tsugio Takahashi, Tomonori Sekiguchi, Riichiro Takemura, Seiji Narui, Hiroki Fujisawa, Shinichi Miyatake, Makoto Morino, Koji Arai, Satoru Yamada, Shoji Shukuri, Masayuki Nakamura, Yoshitaka Tadaki, Kazuhiko Kajigaya, Katsutaka Kimura, Kiyoo Itoh

IEEE J. Solid State Circuits, 2001

1996

A 29-ns 64-Mb DRAM with hierarchical array architecture.

Masayuki Nakamura, Tugio Takahashi, Takesada Akiba, Goro Kitsukawa, Makoto Morino, Toshihiro Sekiguchi, Isamu Asano, Katsuo Komatsuzaki, Yoshitaka Tadaki, Songsu Cho, Kazuhiko Kajigaya, Tadashi Tachibana, Katsuyuki Sato

IEEE J. Solid State Circuits, 1996