Mako Okamoto

According to our database, Mako Okamoto authored at least 4 papers between 2005 and 2007.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2007

A Capacitorless Twin-Transistor Random Access Memory (TTRAM) on SOI.

Fukashi Morishita, Hideyuki Noda, Isamu Hayashi, Takayuki Gyohten, Mako Okamoto, Takashi Ipposhi, Shigeto Maegawa, Katsumi Dosaka, Kazutami Arimoto

IEICE Trans. Electron., 2007

2006

An On-Chip Supply-Voltage Control System Considering PVT Variations for Worst-Caseless Lower Voltage SoC Design.

Takayuki Gyohten, Fukashi Morishita, Isamu Hayashi, Mako Okamoto, Hideyuki Noda, Katsumi Dosaka, Kazutami Arimoto, Yasutaka Horiba

IEICE Trans. Electron., 2006

2005

A 312-MHz 16-Mb random-cycle embedded DRAM macro with a power-down data retention mode for mobile applications.

Fukashi Morishita, Isamu Hayashi, Hideto Matsuoka, Kazuhiro Takahashi, Kuniyasu Shigeta, Takayuki Gyohten, Mitsutaka Niiro, Hideyuki Noda, Mako Okamoto, Atsushi Hachisuka, Atsushi Amo, Hiroki Shinkawata, Tatsuo Kasaoka, Katsumi Dosaka, Kazutami Arimoto, Kazuyasu Fujishima, Kenji Anami, Tsutomu Yoshihara

IEEE J. Solid State Circuits, 2005

A capacitorless twin-transistor random access memory (TTRAM) on SOI.

Fukashi Morishita, Hideyuki Noda, Takayuki Gyohten, Mako Okamoto, Takashi Ipposhi, Shigeto Maegawa, Katsumi Dosaka, Kazutami Arimoto

Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005