Mahesh Siddabathula

According to our database, Mahesh Siddabathula authored at least 8 papers between 2014 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

Excellent Reliability performances of a truly 5V nBOXFET for Automotive and IOT applications.

D. Lipp, Z. Zhao, G. Krause, Wafa Arfaoui, Elodie Ebrard, Germain Bossu, S. Evseev, Markus Herklotz, Mahesh Siddabathula

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

A Deeper Understanding of Well Charging Reliability with Circuit Relevant Test Structures.

T. L. Tan, C. W. Eng, H. Xu, J. M. Soon, E. Ebard, Mahesh Siddabathula, B. F. Phoong, K. H. Poh, M. Prabhu, X.-L. Zhao, J. M. Koo, K. Cho, G.-W. Zhang

Proceedings of the IEEE International Reliability Physics Symposium, 2022

22FDX™ 5G 28GHz 20dBm Power Amplifier Constant Load and VSWR accelerated aging reliability.

Germain Bossu, Shafi Syed, S. Evseev, Joris Angelo Sundaram Jerome, Wafa Arfaoui, D. Lipp, Mahesh Siddabathula

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Reliability-Conscious MOSFET Compact Modeling with Focus on the Defect-Screening Effect of Hot-Carrier Injection.

Pratik B. Vyas, Ninad Pimparkar, Robert Tu, Wafa Arfaoui, Germain Bossu, Mahesh Siddabathula, Steffen Lehmann, Jung-Suk Goo, Ali B. Icel

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Off-state TDDB in FinFET Technology and its Implication for Safe Operating Area.

Maria Toledano-Luque, Peter C. Paliwoda, Mohamed Nour, Thomas Kauerauf, Byoung Min, Germain Bossu, Mahesh Siddabathula, Tanya Nigam

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

A Novel HCI Reliability Model for RF/mmWave Applications in FDSOI Technology.

Wafa Arfaoui, Germain Bossu, A. Muehlhoff, D. Lipp, R. Manuwald, T. Chen, Tanya Nigam, Mahesh Siddabathula

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Alternating Temperature Stress and Deduction of Effective Stress Levels from Mission Profiles for Semiconductor Reliability.

Alexander Hirler, Adnan Alsioufy, Josef Biba, T. Lehndorff, D. Lipp, Helmut Lochner, Mahesh Siddabathula, S. Simon, Torsten Sulima, Maciej Wiatr, Walter Hansch

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2014

A quantitative study of Phosphorous implantation damage on the thick gate oxide of the 28 nm node.

Xinggong Wan, Sandhya Chandrashekhar, Boris Bayha, Martin Trentzsch, Torben Balzer, Mahesh Siddabathula, Oliver Aubel

Microelectron. Reliab., 2014