M. W. Akram

According to our database, M. W. Akram authored at least 6 papers between 2013 and 2014.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2014

In₀ ₂₅Ga₀ ₇₅As Channel Double Gate Junctionless Transistor.

Bahniman Ghosh, Neelam Surana, M. W. Akram, Ball Mukund Mani Tripathi

J. Low Power Electron., 2014

Impact of High- Spacer on Junctionless Transistor in Sub-Threshold Regime.

Bahniman Ghosh, Partha Mondal, M. W. Akram, Punyasloka Bal

J. Low Power Electron., 2014

Device Physics of Germanium-Junctionless Tunnel Field Effect Transistor and an Approach to Optimize <i>I</i> _on/<i>I</i> _off by Drain Engineering and Work Function Engineering.

Bahniman Ghosh, Punyasloka Bal, Partha Mondal, M. W. Akram

J. Low Power Electron., 2014

Junctionless Silicon-Nanowire Gate-All-Around Tunnel Field Effect Transistor.

M. W. Akram, Bahniman Ghosh

J. Low Power Electron., 2014

2013

Effect of Self Heating on Selective Buried Oxide and Silicon on Insulator Based Junctionless Transistors.

Uzma Khan, Bahniman Ghosh, M. W. Akram

J. Low Power Electron., 2013

Ultrathin Compound Semiconductor in Bulk Planar Junctionless Transistor for High-Performance Nanoscale Transistors.

Bahniman Ghosh, Uzma Khan, Ball Mukund Mani Tripathi, M. W. Akram

J. Low Power Electron., 2013