M. Röhner

According to our database, M. Röhner authored at least 2 papers between 2006 and 2014.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2014

HCS degradation of 5 nm oxide high-voltage PLDMOS.

C. Olk, Stefano Aresu, R. Rudolf, M. Röhner, Wolfgang Gustin, E. Stein Von Kamienski

Microelectron. Reliab., 2014

2006

Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides.

T. Pompl, A. Kerber, M. Röhner, Martin Kerber

Microelectron. Reliab., 2006