M. Rafik

According to our database, M. Rafik authored at least 12 papers between 2009 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2022

Frequency dependant gate oxide TDDB model.

M. Arabi, X. Federspiel, Florian Cacho, M. Rafik, S. Blonkowski, Xavier Garros, G. Guibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2019

Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology.

A. P. Nguyen, Xavier Garros, M. Rafik, Florian Cacho, David Roy, Xavier Federspiel, Fred Gaillard

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Process Optimization for HCI Improvement in I/O Analog Devices.

Cheikh Diouf, N. Guitard, M. Rafik, J. J. Martinez, X. Federspiel, Alain Bravaix, D. Muller, David Roy

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges.

D. Nouguier, X. Federspiel, Gérard Ghibaudo, M. Rafik, David Roy

Microelectron. Reliab., 2018

AC TDDB extensive study for an enlargement of its impact and benefit on circuit lifetime assessment.

M. Rafik, A. P. Nguyen, Xavier Garros, M. Arabi, X. Federspiel, Cheikh Diouf

Proceedings of the IEEE International Reliability Physics Symposium, 2018

A new method for quickly evaluating reversible and permanent components of the BTI degradation.

Xavier Garros, Alexandre Subirats, Gilles Reimbold, Fred Gaillard, Cheikh Diouf, X. Federspiel, Vincent Huard, M. Rafik

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Modeling self-heating effects in advanced CMOS nodes.

M. Arabi, A. Cros, X. Federspiel, Cheikh Ndiaye, Vincent Huard, M. Rafik

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015

Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment.

A. Bezza, M. Rafik, David Roy, X. Federspiel, P. Mora, Cheikh Diouf, Vincent Huard, Gérard Ghibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Performance and reliability of strained SOI transistors for advanced planar FDSOI technology.

Guillaume Besnard, Xavier Garros, Alexandre Subirats, François Andrieu, X. Federspiel, M. Rafik, Walter Schwarzenbach, Gilles Reimbold, Olivier Faynot, Sorin Cristoloveanu

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2011

Challenges and opportunity in performance, variability and reliability in sub-45 nm CMOS technologies.

Franck Arnaud, L. Pinzelli, C. Gallon, M. Rafik, P. Mora, Frédéric Boeuf

Microelectron. Reliab., 2011

2010

Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation.

L. Gerrer, M. Rafik, G. Ribes, Gérard Ghibaudo, E. Vincent

Microelectron. Reliab., 2010

2009

Process dependence of BTI reliability in advanced HK MG stacks.

Xavier Garros, Mikaël Cassé, M. Rafik, Claire Fenouillet-Béranger, Gilles Reimbold, François Martin, Claudia Wiemer, F. Boulanger

Microelectron. Reliab., 2009