M. R. Holzworth

According to our database, M. R. Holzworth authored at least 5 papers between 2011 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2017

Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts.

Patrick G. Whiting, Nicholas G. Rudawski, M. R. Holzworth, Stephen J. Pearton, Kevin S. Jones, Lu Liu, T. S. Kang, Fan Ren

Microelectron. Reliab., 2017

Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors.

Patrick G. Whiting, M. R. Holzworth, A. G. Lind, Stephen J. Pearton, Kevin S. Jones, Lu Liu, T. S. Kang, Fan Ren, Y. Xin

Microelectron. Reliab., 2017

2012

Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors.

Patrick G. Whiting, Nicholas G. Rudawski, M. R. Holzworth, Stephen J. Pearton, Kevin S. Jones, Lu Liu, T. S. Kang, Fan Ren

Microelectron. Reliab., 2012

Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors.

E. A. Douglas, C. Y. Chang, B. P. Gila, M. R. Holzworth, Kevin S. Jones, Lu Liu, Jinhyung Kim, Soohwan Jang, Glen David Via, Fan Ren, Stephen J. Pearton

Microelectron. Reliab., 2012

2011

AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress.

E. A. Douglas, C. Y. Chang, David J. Cheney, B. P. Gila, Chi-Fai Lo, Liu Lu, M. R. Holzworth, Patrick G. Whiting, Kevin S. Jones, Glen David Via, Jinhyung Kim, Soohwan Jang, Fan Ren, Stephen J. Pearton

Microelectron. Reliab., 2011