M. Monishmurali

According to our database, M. Monishmurali authored at least 7 papers between 2020 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2023

Impact of Thin-oxide Gate on the On-Resistance of HV-PNP Under ESD Stress.

M. Monishmurali, Nagothu Karmel Kranthi, Gianluca Boselli, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Extremely Large Breakdown to Snapback Voltage Offset $(\mathrm{V}_{\mathrm{t}1} > > \mathrm{V}_{\text{BD}})$: Another Way to Improve ESD Resilience of LDMOS Devices.

Aakanksha Mishra, Boeila Sampath Kumar, M. Monishmurali, Shaik Ahamed Suzaad, Shubham Kumar, Kiran Pote Sanjay, Amit Kumar Singh, Ankur Gupta, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Multi-finger turn-on: A potential cause of premature failure in Drain Extended HV Nanosheet Devices.

Jatin, M. Monishmurali, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Effect of Source & Drain Side Abutting on the Low Current Filamentation in LDMOS-SCR Devices.

M. Monishmurali, Nagothu Karmel Kranthi, Gianluca Boselli, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

A Novel High Voltage Drain Extended FinFET SCR for SoC Applications.

M. Monishmurali, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Peculiar Current Instabilities & Failure Mechanism in Vertically Stacked Nanosheet ggN-FET.

M. Monishmurali, Mayank Shrivastava

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Improved Turn-on Uniformity & Failure Current Density by n-& p-Tap Engineering in Fin Based SCRs.

M. Monishmurali, Milova Paul, Mayank Shrivastava

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020