M. Lorenzini

According to our database, M. Lorenzini authored at least 4 papers between 1996 and 2015.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2015

Degradation of 0.25 μm GaN HEMTs under high temperature stress test.

Maximilian Dammann, Martina Baeumler, Peter Brückner, Wolfgang Bronner, Stephan Maroldt, Helmer Konstanzer, Matthias Wespel, Rüdiger Quay, Michael Mikulla, Andreas Graff, M. Lorenzini, M. Fagerlind, P. J. van der Wel, T. Rödle

Microelectron. Reliab., 2015

2001

Simulation of 0.35 μm/0.25 μm CMOS Technology Doping Profiles.

M. Lorenzini, Luc Haspeslagh, Jan Van Houdt, Herman E. Maes

VLSI Design, 2001

1998

Recent Advances in Device Simulation Using Standard Transport Models.

Giorgio Baccarani, Massimo Rudan, M. Lorenzini, C. Sala

VLSI Design, 1998

1996

Device simulation for smart integrated systems (DESSIS).

Giorgio Baccarani, Massimo Rudan, M. Lorenzini, Wolfgang Fichtner, J. Litsios, A. Schenk, P. Van Staa, L. Kaeser, A. Kampmann, A. Marmiroli, C. Sala, E. Ravanelli

Proceedings of Third International Conference on Electronics, Circuits, and Systems, 1996