M. Houssa

According to our database, M. Houssa authored at least 4 papers between 2005 and 2015.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2015

Optimization of the write algorithm at low-current (10μA) in Cu/Al2O3-based conductive-bridge RAM.

Attilio Belmonte, Andrea Fantini, Augusto Redolfi, M. Houssa, Malgorzata Jurczak, Ludovic Goux

Proceedings of the 45th European Solid State Device Research Conference, 2015

2007

NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase.

A. Shickova, Ben Kaczer, Anabela Veloso, Marc Aoulaiche, M. Houssa, Herman E. Maes, Guido Groeseneken, J. A. Kittl

Microelectron. Reliab., 2007

Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling.

M. Houssa, Marc Aoulaiche, Stefan De Gendt, Guido Groeseneken, Marc M. Heyns

Microelectron. Reliab., 2007

2005

Modelling negative bias temperature instabilities in advanced p-MOSFETs.

M. Houssa

Microelectron. Reliab., 2005