M. Hong

According to our database, M. Hong authored at least 4 papers between 2019 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

Highly Robust All-Oxide Transistors with Ultrathin In2O3 as Channel and Thick In2O3 as Metal Gate Towards Vertical Logic and Memory.

Z. Lin, Z. Zhang, C. Niu, H. Dou, K. Xu, M. Islam, J.-Y. Lin, C. Sung, M. Hong, Daewon Ha, H. Wang, M. A. Alam, P. D. Ye

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Exploring Innovative IGZO-channel based DRAM Cell Architectures and Key Technologies for Sub-10nm Node.

Daewon Ha, Y. Lee, S. Yoo, W. Lee, M. H. Cho, K. Yoo, S. M. Lee, S. Lee, M. Terai, T. H. Lee, J. H. Bae, K. J. Moon, C. Sung, M. Hong, D. G. Cho, K. Lee, S. W. Park, K. Park, Bong Jin Kuh, S. Hyun, Sujin Ahn, J. H. Song

Proceedings of the IEEE International Memory Workshop, 2024

2019

Fundamental Understanding of Oxide Defects in HfO2 and Y2O3 on GaAs(001) with High Thermal Stability.

H. W. Wan, Y. J. Hong, L. B. Young, M. Hong, J. Kwo

Proceedings of the IEEE International Reliability Physics Symposium, 2019

BTI Characterization of MBE Si-Capped Ge Gate Stack and Defect Reduction via Forming Gas Annealing.

H. W. Wan, Y. J. Hong, Y. T. Cheng, M. Hong

Proceedings of the IEEE International Reliability Physics Symposium, 2019