M'Hamed Trabelsi

According to our database, M'Hamed Trabelsi authored at least 3 papers between 2006 and 2007.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2007

Analysis of slow traps centres in submicron MOSFETs by random telegraph signal technique.

Nabil Sghaier, Liviu Militaru, M'Hamed Trabelsi, Yacoubi Yacoubi, Souifi Souifi

Microelectron. J., 2007

2006

Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates.

Nabil Sghaier, M'Hamed Trabelsi, Noureddine Yacoubi, Jean-Marie Bluet, Abdelkader Souifi, Gérard Guillot, Christophe Gaquière, J. C. DeJaeger

Microelectron. J., 2006

Static and low-frequency noise characterization in submicron MOSFETs for memories cells applications.

Nabil Sghaier, M'Hamed Trabelsi, Ne. Sghaier, Liviu Militaru, Abdelkader Souifi, Adel Kalboussi, Noureddine Yacoubi

Microelectron. J., 2006