M. Givens

According to our database, M. Givens authored at least 3 papers between 2023 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

DRAM-Peri FinFET - A Thermally-Stable High-Performance Advanced CMOS RMG Platform with Mo-Based pWFM for sub-10nm DRAM.

J. Ganguly, Hiroaki Arimura, Romain Ritzenthaler, H. Bana, J. W. Maes, J. G. Lai, S. Brus, W. Maqsood, R. Sarkar, B. Kannan, Elena Capogreco, V. Machkaoutsan, S. Yoon, Alessio Spessot, M. Givens, Naoto Horiguchi

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Vt Fine-Tuning in Multi-Vt Gate-All-Around Nanosheet nFETs Using Rare-Earth Oxide-Based Dipole-First Gate Stack Compatible with CFET Integration.

Hiroaki Arimura, Hans Mertens, Jacopo Franco, L. Lukose, W. Maqsood, S. Brus, Thomas Chiarella, A. Impagnatiello, S. Homkar, V. K. Mootheri, C. Yin, G. Alessio Verni, M. Givens, L. Petersen Barbosa Lima, S. Biesemans, N. Horiguchi

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023

Molybdenum Nitride as a Scalable and Thermally Stable pWFM for CFET.

Hiroaki Arimura, S. Brus, Jacopo Franco, Yusuke Oniki, A. Vandooren, T. Conard, B. T. Chan, B. Kannan, M. Samiee, W. Li, P. Deminskyi, E. Shero, J. Bakke, Nicolas Jourdan, G. Alessio Verni, J. W. Maes, M. Givens, Lars-Åke Ragnarsson, Jérôme Mitard, E. Dentoni Litta, N. Horiguchi

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023