M. G. Gottwald

According to our database, M. G. Gottwald authored at least 2 papers between 2022 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

First Demonstration of High Retention Energy Barriers and 2 ns Switching, Using Magnetic Ordered-Alloy-Based STT MRAM Devices.

M. G. Gottwald, Guohan Hu, Philip Louis Trouilloud, L. Rehm, C. Safranski, G. Kim, S. L. Brown, J. Bruley, C. P. D'Emic, O. Gunawan, H. Jung, C. Lavoie, J. Lee, J. Liang, M. Robbins, J. Z. Sun, P. Hashemi, Daniel Christopher Worledge

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2022

Reliable Sub-nanosecond MRAM with Double Spin-torque Magnetic Tunnel Junctions.

C. Safranski, Guohan Hu, J. Z. Sun, P. Hashemi, S. L. Brown, L. Buzi, C. P. D'Emic, E. R. J. Edwards, Eileen A. Galligan, M. G. Gottwald, O. Gunawan, S. Karimeddiny, H. Jung, J. Kim, Kenneth F. Latzko, Philip Louis Trouilloud, S. Zare, Daniel Christopher Worledge

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022