M. C. Poon

According to our database, M. C. Poon authored at least 6 papers between 2001 and 2005.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2005

Dielectric breakdown characteristics and interface trapping of hafnium oxide films.

Nian Zhan, M. C. Poon, Hei Wong, K. L. Ng, Chi-Wah Kok

Microelectron. J., 2005

2003

Electrical characterization of the hafnium oxide prepared by direct sputtering of Hf in oxygen with rapid thermal annealing.

K. L. Ng, Nian Zhan, Chi-Wah Kok, M. C. Poon, Hei Wong

Microelectron. Reliab., 2003

Oxynitride gate dielectric prepared by thermal oxidation of low-pressure chemical vapor deposition silicon-rich silicon nitride.

Jackie Chan, Hei Wong, M. C. Poon, Chi-Wah Kok

Microelectron. Reliab., 2003

2002

A novel approach for fabricating light-emitting porous polysilicon films.

P. G. Han, Hei Wong, Andy H. P. Chan, M. C. Poon

Microelectron. Reliab., 2002

2001

Investigation of the surface silica layer on porous poly-Si thin films.

Hei Wong, P. G. Han, M. C. Poon, Y. Gao

Microelectron. Reliab., 2001

SIMS study of silicon oxynitride prepared by oxidation of silicon-rich silicon nitride layer.

M. C. Poon, Y. Gao, Ted Chi-Wah Kok, A. M. Myasnikov, Hei Wong

Microelectron. Reliab., 2001