M. Arabi

According to our database, M. Arabi authored at least 5 papers between 2018 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2022

Frequency dependant gate oxide TDDB model.

M. Arabi, X. Federspiel, Florian Cacho, M. Rafik, S. Blonkowski, Xavier Garros, G. Guibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2018

AC TDDB extensive study for an enlargement of its impact and benefit on circuit lifetime assessment.

M. Rafik, A. P. Nguyen, Xavier Garros, M. Arabi, X. Federspiel, Cheikh Diouf

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Key parameters driving transistor degradation in advanced strained SiGe channels.

Vincent Huard, Cheikh Ndiaye, M. Arabi, Narendra Parihar, X. Federspiel, Souhir Mhira, S. Mahapatra, Alain Bravaix

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Modeling self-heating effects in advanced CMOS nodes.

M. Arabi, A. Cros, X. Federspiel, Cheikh Ndiaye, Vincent Huard, M. Rafik

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Integrated Test Structures for Reliability Investigation under Dynamic Stimuli.

Florian Cacho, D. Nouguier, M. Arabi, X. Federspiel, Y. Carminati, M. Saliva

Proceedings of the 24th IEEE International Symposium on On-Line Testing And Robust System Design, 2018