Lis K. Nanver

According to our database, Lis K. Nanver authored at least 21 papers between 2001 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2021

Modeling and Simulation Study of Electrical Properties of Ge-on-Si Diodes with Nanometer-thin PureGaB Layer.

Lovro Markovic, Tihomir Knezevic, Lis K. Nanver, Tomislav Suligoj

Proceedings of the 44th International Convention on Information, 2021

2019

Reverse breakdown and light-emission patterns studied in Si PureB SPADs.

Max Krakers, T. Kneevic, Lis K. Nanver

Proceedings of the 42nd International Convention on Information and Communication Technology, 2019

Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers.

Tihomir Knezevic, Tomislav Suligoj, Lis K. Nanver

Proceedings of the 42nd International Convention on Information and Communication Technology, 2019

Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 °C.

Tihomir Knezevic, Tomislav Suligoj, Xingyu Liu, Lis K. Nanver, Ahmed Elsayed, Jan F. Dick, Jörg Schulze

Proceedings of the 49th European Solid-State Device Research Conference, 2019

2018

An experimental view on PureB silicon photodiode device physics.

Lis K. Nanver

Proceedings of the 41st International Convention on Information and Communication Technology, 2018

Non-linear behavior of Al-contacted pure amorphous boron (PureB) devices at low temperatures.

Tihomir Knezevic, Lis K. Nanver, Ivana Capan, Tomislav Suligoj

Proceedings of the 41st International Convention on Information and Communication Technology, 2018

2017

Perimeter effects from interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions.

Tihomir Knezevic, Lis K. Nanver, Tomislav Suligoj

Proceedings of the 40th International Convention on Information and Communication Technology, 2017

2016

Random Telegraph Signal phenomena in avalanche mode diodes: Application to SPADs.

Vishal Agarwal, Anne-Johan Annema, Satadal Dutta, Raymond J. E. Hueting, Lis K. Nanver, Bram Nauta

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2013

Role of junction depth in light emission from silicon p-i-n leds.

Giulia Piccolo, Amir Sammak, Raymond J. E. Hueting, Jurriaan Schmitz, Lis K. Nanver

Proceedings of the European Solid-State Device Research Conference, 2013

High-ohmic resistors using nanometer-thin pure-boron chemical-vapour-deposited layers.

Negin Golshani, Vahid Mohammadi, Siva Ramesh, Lis K. Nanver

Proceedings of the European Solid-State Device Research Conference, 2013

2012

Electrical and Optical Performance Investigation of Si-Based Ultrashallow-Junction p⁺-n VUV/EUV Photodiodes.

Lei Shi, Stoyan N. Nihtianov, Sha Xia, Lis K. Nanver, Alexander Gottwald, Frank Scholze

IEEE Trans. Instrum. Meas., 2012

Modelling of electrical characteristics of ultrashallow pure amorphous boron p⁺n junctions.

Tihomir Knezevic, Tomislav Suligoj, Agata Sakic, Lis K. Nanver

Proceedings of the 2012 Proceedings of the 35th International Convention, 2012

Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application.

Lei Shi, Stoyan N. Nihtianov, Frank Scholze, Lis K. Nanver

Proceedings of the 38th Annual Conference on IEEE Industrial Electronics Society, 2012

Epitaxial growth of large-area p⁺n diodes at 400 ºC by Aluminum-Induced Crystallization.

Agata Sakic, Lin Qi, Tom L. M. Scholtes, Johan van der Cingel, Lis K. Nanver

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2011

Optimization of the perimeter doping of ultrashallow p⁺-n^--n⁺ photodiodes.

Tihomir Knezevic, Tomislav Suligoj, Agata Sakic, Lis K. Nanver

Proceedings of the MIPRO, 2011

2009

Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling.

Lis K. Nanver, Hugo Schellevis, Tom L. M. Scholtes, Luigi La Spina, Gianpaolo Lorito, Francesco Sarubbi, Viktor Gonda, Milos Popadic, Koen Buisman, Leo C. N. de Vreede, Cong Huang, Silvana Milosavljevic, Egbert J. G. Goudena

IEEE J. Solid State Circuits, 2009

2006

Adaptive Multi-Band Multi-Mode Power Amplifier Using Integrated Varactor-Based Tunable Matching Networks.

W. C. Edmund Neo, Yu Lin, Xiaodong Liu, Leo C. N. de Vreede, Lawrence E. Larson, Marco Spirito, Marco J. Pelk, Koen Buisman, Atef Akhnoukh, Anton de Graauw, Lis K. Nanver

IEEE J. Solid State Circuits, 2006

2005

Electrothermal characterization of silicon-on-glass VDMOSFETs.

Nebojsa Nenadovic, V. Cuoco, S. J. C. H. Theeuwen, Lis K. Nanver, Hugo Schellevis, G. Spierings, H. F. F. Jos, J. W. Slotboom

Microelectron. Reliab., 2005

2004

Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors.

Nebojsa Nenadovic, Slobodan Mijalkovic, Lis K. Nanver, Lode K. J. Vandamme, Vincenzo d'Alessandro, Hugo Schellevis, Jan W. Slotboom

IEEE J. Solid State Circuits, 2004

2003

Power amplifier PAE and ruggedness optimization by second-harmonic control.

Marco Spirito, Leo C. N. de Vreede, Lis K. Nanver, Stephan Weber, Joachim N. Burghartz

IEEE J. Solid State Circuits, 2003

2001

Reduction of UHF power transistor distortion with a nonuniform collector doping profile.

Wibo D. van Noort, Leo C. N. de Vreede, H. F. F. Jos, Lis K. Nanver, Jan W. Slotboom

IEEE J. Solid State Circuits, 2001