Lionel Trojman

Orcid: 0000-0003-2316-4959

According to our database1, Lionel Trojman authored at least 23 papers between 2015 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Natural Language Processing for Arabic Sentiment Analysis: A Systematic Literature Review.
IEEE Trans. Big Data, October, 2024

All-GaN Integrated Overcurrent Protection Circuit Using Only Enhancement-mode p-GaN Devices.
Proceedings of the 37th SBC/SBMicro/IEEE Symposium on Integrated Circuits and Systems Design, 2024

Design of a Gate Driver Based-on E-mode p-GaN HEMTs Handling 650V/10A GaN Power Device.
Proceedings of the 22nd IEEE Interregional NEWCAS Conference, 2024

2023
Efficiency of Double-Barrier Magnetic Tunnel Junction-Based Digital eNVM Array for Neuro-Inspired Computing.
IEEE Trans. Circuits Syst. II Express Briefs, March, 2023

SIMPLY+: A Reliable STT-MRAM-Based Smart Material Implication Architecture for In-Memory Computing.
IEEE Access, 2023

Enhancement-mode p-GaN Comparators for power applications.
Proceedings of the 18th Conference on Ph.D Research in Microelectronics and Electronics, 2023

Analysis and Design of a Self-Powered VEH System Based on ULP Comparator.
Proceedings of the 14th IEEE Latin America Symposium on Circuits and System, 2023

2022
Adjusting Thermal Stability in Double-Barrier MTJ for Energy Improvement in Cryogenic STT-MRAMs.
CoRR, 2022

Design and optimization of a Vibrational MEMS-Based Energy Harvester.
Proceedings of the 17th Conference on Ph.D Research in Microelectronics and Electronics, 2022

DMTJ-Based Non-Volatile Ternary Content Addressable Memory for Energy-Efficient High-Performance Systems.
Proceedings of the 13th IEEE Latin America Symposium on Circuits and System, 2022

Energy-Efficient FinFET-Versus TFET-Based STT-MRAM Bitcells.
Proceedings of the 13th IEEE Latin America Symposium on Circuits and System, 2022

Voltage-to-Voltage Sigmoid Neuron Activation Function Design for Artificial Neural Networks.
Proceedings of the 13th IEEE Latin America Symposium on Circuits and System, 2022

Voltage and Technology Scaling of DMTJ-based STT-MRAMs for Energy-Efficient Embedded Memories.
Proceedings of the 13th IEEE Latin America Symposium on Circuits and System, 2022

2021
RF-DC Multiplier for RF Energy Harvester based on 32nm and TFET technologies.
Proceedings of the 12th IEEE Latin America Symposium on Circuits and System, 2021

High-Speed and Low-Energy Dual-Mode Logic based Single-Clack-Cycle Binary Comparator.
Proceedings of the 12th IEEE Latin America Symposium on Circuits and System, 2021

ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020
Assessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework.
Integr., 2020

Optimization of Active Voltage Rectifier / Doubler Designed in 90 nm Technology.
Proceedings of the 11th IEEE Latin American Symposium on Circuits & Systems, 2020

Reconfigurable CMOS/STT-MTJ Non-Volatile Circuit for Logic-in-Memory Applications.
Proceedings of the 11th IEEE Latin American Symposium on Circuits & Systems, 2020

2019
Exploiting Double-Barrier MTJs for Energy-Efficient Nanoscaled STT-MRAMs.
Proceedings of the 16th International Conference on Synthesis, 2019

New insight for next generation SRAM: tunnel FET versus FinFET for different topologies.
Proceedings of the 32nd Symposium on Integrated Circuits and Systems Design, 2019

Microprocessor Design with a Direct Bluetooth Connection in 45 nm Technology Using Microwind.
Proceedings of the 10th IEEE Latin American Symposium on Circuits & Systems, 2019

2015
Origins and implications of increased channel hot carrier variability in nFinFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2015


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