Ling Yang

Orcid: 0000-0001-7284-8180

Affiliations:
  • Xidian University, School of Advanced Materials and Nanotechnology, China
  • Xidian University, State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, China


According to our database1, Ling Yang authored at least 9 papers between 2018 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Realtime observation of "spring fracture" like AlGaN/GaN HEMT failure under bias.
Sci. China Inf. Sci., 2024

Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure.
Sci. China Inf. Sci., 2024

2022
A Broadband Amplifier With Flat Bandwidth for Modulator and Measurement Driver Circuits.
IEEE Trans. Instrum. Meas., 2022

Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method.
Sci. China Inf. Sci., 2022

First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF Applications.
Proceedings of the 2022 IEEE International Conference on Integrated Circuits, 2022

2021
Recent progress of integrated circuits and optoelectronic chips.
Sci. China Inf. Sci., 2021

Novel Selective Area Recessed Regrowth-free Ohmic Contacts to High Al-content Barrier.
Proceedings of the 2021 IEEE International Conference on Integrated Circuits, 2021

2020
Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature.
IEEE Access, 2020

2018
Threshold voltage shift and interface/border trapping mechanism in Al2O3/AlGaN/GaN MOS-HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2018


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