Lin-An Yang

According to our database, Lin-An Yang authored at least 9 papers between 2008 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Low-high-low doped Ga2O3 Schottky barrier IMPATT diodes on various crystal orientations for terahertz applications.

Xin-Yi Wang, Lin-An Yang, Xuan Huang, Jian-Hua Zhou, Xiao-Hua Ma, Yue Hao

Microelectron. J., 2024

2019

A five-octave broadband LNA MMIC using bandwidth enhancement and noise reduction technique.

Lin Yang, Lin-An Yang, Taotao Rong, Zhi Jin, Yue Hao

IEICE Electron. Express, 2019

Codesign of <i>K</i> a-Band Integrated GaAs PIN Diodes Limiter and Low Noise Amplifier.

Lin Yang, Lin-An Yang, Taotao Rong, Yang Li, Zhi Jin, Yue Hao

IEEE Access, 2019

2018

1-30 GHz ultra-wideband low noise amplifier with on-chip temperature-compensation circuit.

Lin Yang, Lin-An Yang, Taotao Rong, Zhi Jin, Yue Hao

IEICE Electron. Express, 2018

2016

Dual priority congestion aware shared-resource Network-on-Chip architecture.

Hao Shu, Jiangyi Shi, Peijun Ma, Huaxi Gu, Weitao Pan, Lin-An Yang

IEICE Electron. Express, 2016

2014

SRNoC: A novel high performance Shared-Resource routing scheme for Network-on-Chip.

Hao Shu, Peijun Ma, Jiangyi Shi, Zhao Xu, Lin-An Yang

Microelectron. J., 2014

2013

Erratum: The impact of trapping centers on AlGaN/GaN resonant tunneling diode [IEICE Electronics Express Vol 10 (2013) No 19 pp 20130588].

Haoran Chen, Lin-An Yang, Xiaoxian Liu, Zhangming Zhu, Jun Luo, Yue Hao

IEICE Electron. Express, 2013

The impact of trapping centers on AlGaN/GaN resonant tunneling diode.

Haoran Chen, Lin-An Yang, Xiaoxian Liu, Zhangming Zhu, Jun Luo, Yue Hao

IEICE Electron. Express, 2013

2008

A new model of subthreshold swing for sub-100 nm MOSFETs.

Lin-An Yang, Chun-Li Yu, Yue Hao

Microelectron. Reliab., 2008