Licai Hao

According to our database, Licai Hao authored at least 13 papers between 2022 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

High-Performance Latch Designs of Double-Node-Upset Self-Recovery and Triple-Node-Upset Tolerance for Aerospace Applications.

Chunyu Peng, Lang Tian, Licai Hao, Qiang Zhao, Chenghu Dai, Zhiting Lin, Xiulong Wu

IEEE Trans. Aerosp. Electron. Syst., October, 2024

Low-Cost and Highly Robust Quadruple Node Upset Tolerant Latch Design.

Licai Hao, Yaling Wang, Yunlong Liu, Shiyu Zhao, Xinyi Zhang, Yang Li, Wenjuan Lu, Chunyu Peng, Qiang Zhao, Yongliang Zhou, Chenghu Dai, Zhiting Lin, Xiulong Wu

IEEE Trans. Very Large Scale Integr. Syst., May, 2024

Soft-Error-Immune Quadruple-Node-Upset Tolerant Latch Based on Polarity Design and Source-Isolation Technologies.

Licai Hao, Xinyi Zhang, Chenghu Dai, Qiang Zhao, Wenjuan Lu, Chunyu Peng, Yongliang Zhou, Zhiting Lin, Xiulong Wu

IEEE Trans. Very Large Scale Integr. Syst., April, 2024

Flip Point Offset-Compensation Sense Amplifier With Sensing-Margin-Enhancement for Dynamic Random-Access Memory.

Li Liu, Dele Tai, Bin Qiang, Lijun Guan, Chunyu Peng, Chenghu Dai, Licai Hao, Wenjuan Lu, Zhiting Lin, Qiang Zhao, Xiulong Wu

IEEE Trans. Circuits Syst. II Express Briefs, April, 2024

A CFMB STT-MRAM-Based Computing-in-Memory Proposal With Cascade Computing Unit for Edge AI Devices.

Yongliang Zhou, Zixuan Zhou, Yiming Wei, Zhen Yang, Xiao Lin, Chenghu Dai, Licai Hao, Chunyu Peng, Hao Cai, Xiulong Wu

IEEE Trans. Circuits Syst. I Regul. Pap., January, 2024

Design of polarity hardening SRAM for mitigating single event multiple node upsets.

Shiyu Zhao, Qiang Zhao, Licai Hao, Chunyu Peng, Yaling Wang, Wenjuan Lu, Zhiting Lin, Xiulong Wu

Microelectron. J., 2024

An 11-bit two-step column-shared ADC based on Flash/SS architecture for CMOS image sensor.

Qiang Zhao, Jitao Xu, Chunhui Fan, Ziming Wang, Ruitong Hu, Xin Li, Zhigang Li, Licai Hao, Chunyu Peng, Zhiting Lin, Xiulong Wu

Microelectron. J., 2024

Cross-coupled 4T2R multi-logic in-memory computing circuit design.

Zhiting Lin, Changxin Yue, Ke Li, Qiushi Feng, Siyan Li, Yue Zhao, Yuanyang Wang, Jiaqi Chen, Wenjuan Lu, Chunyu Peng, Qiang Zhao, Chenghu Dai, Licai Hao, Xiulong Wu

Microelectron. J., 2024

2023

Novel radiation-hardened-by-design (RHBD) 14T memory cell for aerospace applications in 65 nm CMOS technology.

Pengfei Li, Xiuying Wang, Yin Zhang, Haoyu Wang, Jianjie Lu, Qiang Zhao, Licai Hao, Chunyu Peng, Wenjuan Lu, Zhiting Lin, Xiulong Wu

Microelectron. J., November, 2023

Design of radiation-hardened memory cell by polar design for space applications.

Licai Hao, Li Liu, Qi Shi, Bin Qiang, Zhengya Li, Nianlong Liu, Chenghu Dai, Qiang Zhao, Chunyu Peng, Wenjuan Lu, Zhiting Lin, Xiulong Wu

Microelectron. J., February, 2023

Bit-line leakage current tracking and self-compensation circuit for SRAM reliability design.

Chenghu Dai, Yuanyuan Du, Qi Shi, Ruixuan Wang, Hao Zheng, Wenjuan Lu, Chunyu Peng, Licai Hao, Zhiting Lin, Xiulong Wu

Microelectron. J., February, 2023

Radiation-hardened 14T SRAM cell by polar design for space applications.

Licai Hao, Bin Qiang, Chenghu Dai, Chunyu Peng, Wenjuan Lu, Zhiting Lin, Li Liu, Qiang Zhao, Xiulong Wu, Fei Sun

IEICE Electron. Express, 2023

2022

Novel radiation-hardened latch design for space-radiation environments.

Qiang Zhao, Hanwen Dong, Licai Hao, Xiuying Wang, Chunyu Peng, Xiulong Wu

IEICE Electron. Express, 2022