Leming Jiao

According to our database1, Leming Jiao authored at least 13 papers between 2022 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Transposable Memory Based on the Ferroelectric Field-Effect Transistor.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2024

2023
First Study of the Charge Trapping Aggravation Induced by Anti-Ferroelectric Switching in the MFIS Stack.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Non-Destructive-Read 1T1C Ferroelectric Capacitive Memory Cell with BEOL 3D Monolithically Integrated IGZO Access Transistor for 4F<sup>2</sup> High-Density Integration.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

First Demonstration of Work Function-Engineered BEOL-Compatible IGZO Non-Volatile MFMIS AFeFETs and Their Co-Integration with Volatile-AFeFETs.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Grain Size Reduction of Ferroelectric HZO Enabled by a Novel Solid Phase Epitaxy (SPE) Approach: Working Principle, Experimental Demonstration, and Theoretical Understanding.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

First Demonstration of BEOL-Compatible MFMIS Fe-FETs with 3D Multi-Fin Floating Gate: In-situ ALD-deposited MFM, LCH of 50 nm, > 2×10<sup>9</sup> Endurance, and 58.3% Area Saving.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

First Demonstration of BEOL-Compatible Write-Enhanced Ferroelectric-Modulated Diode (FMD): New Possibility for Oxide Semiconductor Memory Devices.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory.
Proceedings of the International Conference on IC Design and Technology, 2023

2022
Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High CHCS/CLCS, Fast Speed, and Long Retention.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Boosting the Memory Window of the BEOL-Compatible MFMIS Ferroelectric/ Anti-Ferroelectric FETs by Charge Injection.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

First Si-Waveguide-Integrated InGaAs/InAlAs Avalanche Photodiodes on SOI Platform.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

First Demonstration of Fully CMOS-compatible Non-volatile Programmable Photonic Switch Enabled by Ferroelectric-SOI Waveguide for Next Generation Photonic Integrated Circuit.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

BEOL-compatible Ta/HZO/W Ferroelectric Tunnel Junction with Low Operating Voltage Targeting for Low Power Application.
Proceedings of the International Conference on IC Design and Technology, 2022


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