Laurent Grenouillet
According to our database1,
Laurent Grenouillet
authored at least 21 papers
between 2012 and 2024.
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Bibliography
2024
A Novel Design Technique for Enhanced Security and New Applications of Ferroelectric-Based Non-Volatile SRAM.
Proceedings of the 32nd IFIP/IEEE International Conference on Very Large Scale Integration, 2024
Data Retention Insights from Joint Analysis on BEOL-Integrated HZO-Based Scaled FeCAPs and 16kbit 1T-1C FeRAM Arrays.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
Charge-based Sense Demonstration in 1T-1C HZO FeRAM Arrays to Overcome CBL-induced Bank Size Limitations.
Proceedings of the IEEE International Memory Workshop, 2024
2023
DenRAM: Neuromorphic Dendritic Architecture with RRAM for Efficient Temporal Processing with Delays.
CoRR, 2023
Compute-In-Place Serial FeRAM: Enhancing Performance, Efficiency and Adaptability in Critical Embedded Systems.
Proceedings of the 31st IFIP/IEEE International Conference on Very Large Scale Integration, 2023
1S1R Sub-Threshold Operation in Crossbar Arrays for Neural Networks Hardware Implementation.
Proceedings of the 30th International Conference on Mixed Design of Integrated Circuits and System, 2023
Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited).
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Proceedings of the IEEE International Memory Workshop, 2023
Memory Window in Si: HfO2 FeRAM arrays: Performance Improvement and Extrapolation at Advanced Nodes.
Proceedings of the IEEE International Memory Workshop, 2023
2022
Proceedings of the IEEE International Memory Workshop, 2022
1S1R sub-threshold operation in Crossbar arrays for low power BNN inference computing.
Proceedings of the IEEE International Memory Workshop, 2022
Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability.
Proceedings of the IEEE International Memory Workshop, 2022
Interplay between charge trapping and polarization switching in MFDM stacks evidenced by frequency-dependent measurements.
Proceedings of the 48th IEEE European Solid State Circuits Conference, 2022
2021
Proceedings of the IEEE International Symposium on Circuits and Systems, 2021
Elucidating 1S1R operation to reduce the read voltage margin variability by stack and programming conditions optimization.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
Proceedings of the IEEE International Memory Workshop, 2021
16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors.
Proceedings of the IEEE International Memory Workshop, 2021
Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions.
Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021
2016
Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells.
Proceedings of the 46th European Solid-State Device Research Conference, 2016
2012
Proceedings of the IEEE International Conference on IC Design & Technology, 2012
Proceedings of the IEEE 2012 Custom Integrated Circuits Conference, 2012