Laurent Grenouillet

According to our database1, Laurent Grenouillet authored at least 21 papers between 2012 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
A Novel Design Technique for Enhanced Security and New Applications of Ferroelectric-Based Non-Volatile SRAM.
Proceedings of the 32nd IFIP/IEEE International Conference on Very Large Scale Integration, 2024

Data Retention Insights from Joint Analysis on BEOL-Integrated HZO-Based Scaled FeCAPs and 16kbit 1T-1C FeRAM Arrays.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Charge-based Sense Demonstration in 1T-1C HZO FeRAM Arrays to Overcome CBL-induced Bank Size Limitations.
Proceedings of the IEEE International Memory Workshop, 2024

2023
DenRAM: Neuromorphic Dendritic Architecture with RRAM for Efficient Temporal Processing with Delays.
CoRR, 2023

Compute-In-Place Serial FeRAM: Enhancing Performance, Efficiency and Adaptability in Critical Embedded Systems.
Proceedings of the 31st IFIP/IEEE International Conference on Very Large Scale Integration, 2023

1S1R Sub-Threshold Operation in Crossbar Arrays for Neural Networks Hardware Implementation.
Proceedings of the 30th International Conference on Mixed Design of Integrated Circuits and System, 2023

Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited).
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Demonstration of SMT-reflow Immune and SCA-resilient PUF on 28nm RRAM device array.
Proceedings of the IEEE International Memory Workshop, 2023

Memory Window in Si: HfO2 FeRAM arrays: Performance Improvement and Extrapolation at Advanced Nodes.
Proceedings of the IEEE International Memory Workshop, 2023

2022


Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability.
Proceedings of the IEEE International Memory Workshop, 2022

Interplay between charge trapping and polarization switching in MFDM stacks evidenced by frequency-dependent measurements.
Proceedings of the 48th IEEE European Solid State Circuits Conference, 2022

2021
Ferroelectric Tunneling Junctions for Edge Computing.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2021

Elucidating 1S1R operation to reduce the read voltage margin variability by stack and programming conditions optimization.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Ge-Se-Sb-N-based OTS scaling perspectives for high-density 1 S1R crossbar arrays.
Proceedings of the IEEE International Memory Workshop, 2021


Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions.
Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2016
Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells.
Proceedings of the 46th European Solid-State Device Research Conference, 2016

2012
Variability in Fully Depleted MOSFETs.
Proceedings of the IEEE International Conference on IC Design & Technology, 2012



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