Laurent Dupont

According to our database, Laurent Dupont authored at least 11 papers between 2006 and 2014.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2014

Solder void position and size effects on electro thermal behaviour of MOSFET transistors in forward bias conditions.

Son-Ha Tran, Laurent Dupont, Zoubir Khatir

Microelectron. Reliab., 2014

2013

Junction temperature measurements via thermo-sensitive electrical parameters and their application to condition monitoring and active thermal control of power converters.

Nick Baker, Marco Liserre, Laurent Dupont, Yvan Avenas

Proceedings of the IECON 2013, 2013

2012

Evaluation of IGBT thermo-sensitive electrical parameters under different dissipation conditions - Comparison with infrared measurements.

Yvan Avenas, Laurent Dupont

Microelectron. Reliab., 2012

2011

Optimization of wire connections design for power electronics.

Y. Celnikier, Laurent Dupont, E. Hervé, Gerard Coquery, Lahouari Benabou

Microelectron. Reliab., 2011

Investigation of the heel crack mechanism in Al connections for power electronics modules.

Y. Celnikier, Lahouari Benabou, Laurent Dupont, Gerard Coquery

Microelectron. Reliab., 2011

2010

Investigations on junction temperature estimation based on junction voltage measurements.

Zoubir Khatir, Laurent Dupont, Ali Ibrahim

Microelectron. Reliab., 2010

Experimental and numerical results correlation during extreme use of power MOSFET designed for avalanche functional mode.

Laurent Dupont, J. L. Blanchard, Richard Lallemand, Gerard Coquery, Jean-Michel Morelle, G. Blondel, B. Rouleau

Microelectron. Reliab., 2010

2009

Accelerated active ageing test on SiC JFETs power module with silver joining technology for high temperature application.

Laurent Dupont, Gerard Coquery, K. Kriegel, A. Melkonyan

Microelectron. Reliab., 2009

2007

Failure modes on low voltage power MOSFETs under high temperature application.

Laurent Dupont, Stéphane Lefebvre, M. Bouaroudj, Zoubir Khatir, Jean-Claude Faugières

Microelectron. Reliab., 2007

Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions.

M. Bouarroudj, Zoubir Khatir, Jean-Pierre Ousten, F. Badel, Laurent Dupont, Stéphane Lefebvre

Microelectron. Reliab., 2007

2006

Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling.

Laurent Dupont, Zoubir Khatir, Stéphane Lefebvre, S. Bontemps

Microelectron. Reliab., 2006