Laurent Brunel

According to our database, Laurent Brunel authored at least 5 papers between 2012 and 2015.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2015

Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs.

M. Rzin, Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, Laurent Brunel, Benoit Lambert

Microelectron. Reliab., 2015

2013

Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements.

S. Karboyan, Jean-Guy Tartarin, M. Rzin, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, M. Mermoux, E. Romain-Latu, F. Thomas, C. Bouexière, C. Moreau

Microelectron. Reliab., 2013

Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress.

Laurent Brunel, Benoit Lambert, P. Mezenge, J. Bataille, D. Floriot, Jan Grünenpütt, Hervé Blanck, D. Carisetti, Y. Gourdel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat

Microelectron. Reliab., 2013

2012

Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test.

Benoit Lambert, Nathalie Labat, Dominique Carisetti, Serge Karboyan, Jean-Guy Tartarin, Jim Thorpe, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Eddy Latu-Romain, Michel Mermoux

Microelectron. Reliab., 2012

Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements.

Laurent Brunel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat, Benoit Lambert

Proceedings of the 2012 European Solid-State Device Research Conference, 2012