Laurent Breuil
According to our database1,
Laurent Breuil
authored at least 8 papers
between 2014 and 2024.
Collaborative distances:
Collaborative distances:
Timeline
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2020
2022
2024
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Bibliography
2024
Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
Proceedings of the IEEE International Memory Workshop, 2024
2023
Proceedings of the IEEE International Memory Workshop, 2023
Proceedings of the IEEE International Memory Workshop, 2023
2022
High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction.
Proceedings of the IEEE International Memory Workshop, 2022
2021
Understanding the memory window in 1T-FeFET memories: a depolarization field perspective.
Proceedings of the IEEE International Memory Workshop, 2021
First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application.
Proceedings of the IEEE International Memory Workshop, 2021
2014
Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations.
Microelectron. Reliab., 2014