Laurent Breuil

According to our database, Laurent Breuil authored at least 8 papers between 2014 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance.

Yusuke Higashi, J. P. Bastos, Adrian Vaisman Chasin, Laurent Breuil, Antonio Arreghini, S. Ramesh, S. Rachidi, Y. Jeong, Geert Van den Bosch, Maarten Rosmeulen

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Gate Side Injection Operating Mode for 3D NAND Flash Memories.

Laurent Breuil, R. Izmailov, Mihaela Ioana Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, Geert Van den Bosch, Jan Van Houdt, Maarten Rosmeulen

Proceedings of the IEEE International Memory Workshop, 2024

2023

Enabling 3D NAND Trench Cells for Scaled Flash Memories.

S. Rachidi, S. Ramesh, Laurent Breuil, Z. Tao, Devin Verreck, G. L. Donadio, Antonio Arreghini, Geert Van den Bosch, Maarten Rosmeulen

Proceedings of the IEEE International Memory Workshop, 2023

Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND.

Laurent Breuil, Mihaela Ioana Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, Geert Van den Bosch, Jan Van Houdt, Maarten Rosmeulen

Proceedings of the IEEE International Memory Workshop, 2023

2022

High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction.

Laurent Breuil, L. Nyns, S. Rachidi, K. Banerjee, Antonio Arreghini, J. P. Bastos, S. Ramesh, Geert Van den Bosch, Maarten Rosmeulen

Proceedings of the IEEE International Memory Workshop, 2022

2021

Understanding the memory window in 1T-FeFET memories: a depolarization field perspective.

K. Kaczmarek, Marie Garcia Bardon, Y. Xiang, Laurent Breuil, Nicolo Ronchi, Bertrand Parvais, Guido Groeseneken, Jan Van Houdt

Proceedings of the IEEE International Memory Workshop, 2021

First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application.

K. Banerjee, Laurent Breuil, A. P. Milenin, M. Pak, J. Stiers, Sean R. C. McMitchell, L. Di Piazza, Geert Van den Bosch, Jan Van Houdt

Proceedings of the IEEE International Memory Workshop, 2021

2014

Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations.

Baojun Tang, Weidong Zhang, Laurent Breuil, Colin Robinson, Yunqi Wang, Maria Toledano-Luque, Geert Van den Bosch, Jianfu Zhang, Jan Van Houdt

Microelectron. Reliab., 2014