Laarbi Sfaxi

According to our database, Laarbi Sfaxi authored at least 4 papers between 2003 and 2006.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2006

GaAs substrate orientation dependence of resonant quasi-level lifetime in 2D-2D InGaAs/GaAs resonant tunneling devices.

L. Bouzaïene, N. Imbarek, Laarbi Sfaxi, Hichem Maaref

Microelectron. J., 2006

2005

Long-wavelength emission from single InAs quantum dots layer grown on porous GaAs substrate.

Lotfi Beji, L. Bouzaïene, B. Ismaïl, Laarbi Sfaxi, Hichem Maaref, Hafedh Ben Ouada

Microelectron. J., 2005

2004

Self-organized InAs/GaAs quantum dots multilayers with growth interruption emitting at 1.3mum.

L. Bouzaïene, Laarbi Sfaxi, Hichem Maaref

Microelectron. J., 2004

2003

Morphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solution.

Lotfi Beji, Laarbi Sfaxi, B. Ismaïl, S. Zghal, F. Hassen, Hichem Maaref

Microelectron. J., 2003