L. Tsetseris

According to our database, L. Tsetseris authored at least 3 papers between 2007 and 2009.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2009

Performance, reliability, radiation effects, and aging issues in microelectronics - from atomic-scale physics to engineering-level modeling.

Sokrates T. Pantelides, L. Tsetseris, M. J. Beck, Sergey N. Rashkeev, G. Hadjisavvas, I. G. Batyrev, B. R. Tuttle, A. G. Marinopoulos, X. J. Zhou, Daniel M. Fleetwood, Ronald D. Schrimpf

Proceedings of the 35th European Solid-State Circuits Conference, 2009

2007

Hydrogen in MOSFETs - A primary agent of reliability issues.

Sokrates T. Pantelides, L. Tsetseris, Sergey N. Rashkeev, X. J. Zhou, Daniel M. Fleetwood, Ronald D. Schrimpf

Microelectron. Reliab., 2007

Effects of device aging on microelectronics radiation response and reliability.

Daniel M. Fleetwood, M. P. Rodgers, L. Tsetseris, X. J. Zhou, I. Batyrev, S. Wang, Ronald D. Schrimpf, Sokrates T. Pantelides

Microelectron. Reliab., 2007