L. Foro

According to our database, L. Foro authored at least 2 papers between 2012 and 2013.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of four.

2013

Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model.

K. Guetarni, Antoine D. Touboul, Jerome Boch, L. Foro, A. Privat, Alain Michez, J.-R. Vaillé, Frédéric Saigné

Microelectron. Reliab., 2013

2012

On the reliability assessment of trench fieldstop IGBT under atmospheric neutron spectrum.

Antoine D. Touboul, L. Foro, Frederic Wrobel, Frédéric Saigné

Microelectron. Reliab., 2012