L. De Schepper

According to our database, L. De Schepper authored at least 3 papers between 2015 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress.

M. Avramenko, L. De Schepper, J.-F. Cano, F. Geenen, Peter Moens, Alberto Marcuzzi, Carlo De Santi, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study.

Peter Moens, F. Geenen, L. De Schepper, JF Cano, J. Lettens, S. Maslougkas, J. Franchi, Martin Domeij

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2015

Technology and design of GaN power devices.

Peter Moens, Abhishek Banerjee, P. Coppens, Aurore Constant, Piet Vanmeerbeek, Z. Li, F. Declercq, L. De Schepper, H. De Vleeschouwer, C. Liu, B. Padmanabhan, W. Jeon, J. Guo, A. Salih, Marnix Tack

Proceedings of the 45th European Solid State Device Research Conference, 2015